基于薛定谔方程时变解的高频谐振隧穿结构分析

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79845

I. Saadat, J.P. Krusius

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引用次数: 0

摘要

利用时变薛定谔方程分析了一种新型化合物-半导体异质结构隧穿谐振腔的特性。该器件是通过在形成谐振器反射器的两个附加异质结之间嵌入通常的双势垒隧道结构而形成的。对于典型的器件参数，在300 ~ 600 GHz频率范围内观察到可调谐的量子力学振荡。提出了两种潜在的毫米波器件应用。

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Analysis of resonant tunneling structures for high frequency oscillator applications via time-dependent solution of Schrodinger's equation

The characteristics of a new compound-semiconductor heterostructure tunneling resonator are analyzed using the time-dependent Schrodinger equation. The device is formed by imbedding the usual double-barrier tunneling structure between two additional heterojunctions forming the reflectors of the resonator. Tunable quantum mechanical oscillations in the frequency range from 300 to 600 GHz are observed for typical device parameters. Two potential millimeter-wave device applications are proposed.<>

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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