High power efficiency X-band GaAlAs/GaAs HBT

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79831

N.L. Wang, N. Sheng, M. Chang, W. Ho, G. Sullivan, E. Sovero, J. Higgins, P. Asbeck

{"title":"High power efficiency X-band GaAlAs/GaAs HBT","authors":"N.L. Wang, N. Sheng, M. Chang, W. Ho, G. Sullivan, E. Sovero, J. Higgins, P. Asbeck","doi":"10.1109/CORNEL.1989.79831","DOIUrl":null,"url":null,"abstract":"Excellent power performance from a common-emitter GaAlAs/GaAs HBT (heterojunction bipolar transistor) at 10 GHz is reported. Record high added efficiency of 67.8% and 11.6-dB associated gain were obtained, with 0.226-W output power. HBTs of various sizes were tested, and 55% added efficiency and 10-dB associated gain were obtained regularly. From the largest available device 0.63 W with 8-dB gain was obtained. The base current crowding effect does not appear in the HBTs tested. The operation of the HBT is analyzed and shown to be close to that of the class-B amplifier. The collector-current behavior with respect to the power level is explained. Harmonic content is found to be very low. Compared with other solid-state power devices at 10 GHz the HBT demonstrates the highest added efficiency and associated gain at high-output-power condition. In addition, the low HBT input Q factor eases broadband matching, making it the best candidate for microwave power application.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

Abstract

Excellent power performance from a common-emitter GaAlAs/GaAs HBT (heterojunction bipolar transistor) at 10 GHz is reported. Record high added efficiency of 67.8% and 11.6-dB associated gain were obtained, with 0.226-W output power. HBTs of various sizes were tested, and 55% added efficiency and 10-dB associated gain were obtained regularly. From the largest available device 0.63 W with 8-dB gain was obtained. The base current crowding effect does not appear in the HBTs tested. The operation of the HBT is analyzed and shown to be close to that of the class-B amplifier. The collector-current behavior with respect to the power level is explained. Harmonic content is found to be very low. Compared with other solid-state power devices at 10 GHz the HBT demonstrates the highest added efficiency and associated gain at high-output-power condition. In addition, the low HBT input Q factor eases broadband matching, making it the best candidate for microwave power application.<>

查看原文本刊更多论文

高功率效率x波段GaAlAs/GaAs HBT

报道了一种共发射极GaAlAs/GaAs双极异质结晶体管(HBT)在10ghz下的优异功率性能。在0.226 w的输出功率下，获得了创纪录的67.8%的附加效率和11.6 db的相关增益。测试了各种尺寸的hbt，并定期获得55%的附加效率和10db相关增益。从最大可用器件获得0.63 W，增益为8db。基极电流拥挤效应在测试的hbt中没有出现。分析了HBT的工作原理，表明其与b类放大器的工作原理接近。解释了集电极电流相对于功率水平的行为。谐波含量很低。在高输出功率条件下，与其他固态功率器件相比，HBT具有最高的附加效率和相关增益。此外，低HBT输入Q因子简化了宽带匹配，使其成为微波功率应用的最佳候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

自引率

0.00%

发文量