Noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge control characteristics

Abstract

The authors have developed a 2DEGFET (two-dimensional-electron-gas field-effect transistor) noise model that includes accurate charge-control characteristics. It is based on analytical functions relating carrier concentration to Fermi level. Using this model, the influence of drain current, frequency and device parameters on NF (noise figure) was studied. The theory was found to explain the experimentally observed trend in NF behavior. The Fukui fitting factor deduced from this calculation agrees with typical experimental results. This agreement indicates that the present noise model is applicable to the design of 2DEGFETs and amplifiers.<>