基于gaas和inp的单片集成前端光电接收器

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79853

W. Li, Y. Zebda, P. Bhattacharya, D. Pavlidis, J. Oh, J. Pamulapati

{"title":"基于gaas和inp的单片集成前端光电接收器","authors":"W. Li, Y. Zebda, P. Bhattacharya, D. Pavlidis, J. Oh, J. Pamulapati","doi":"10.1109/CORNEL.1989.79853","DOIUrl":null,"url":null,"abstract":"Two different integration schemes for front-end optical receivers have been demonstrated for GaAs- and InP-based material systems. An InP-based p-i-n FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g/sub m/=450 mS/mm and f/sub T/=9 GHz. The GaAs-based planar structure consists of a modulated-barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200, and the FET performance is characterized by g/sub m/=250 mS/mm, f/sub T/=12 GHz, and f/sub max/=21 GHz.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"641 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Monolithically integrated GaAs-based and InP-based front-end photoreceivers\",\"authors\":\"W. Li, Y. Zebda, P. Bhattacharya, D. Pavlidis, J. Oh, J. Pamulapati\",\"doi\":\"10.1109/CORNEL.1989.79853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two different integration schemes for front-end optical receivers have been demonstrated for GaAs- and InP-based material systems. An InP-based p-i-n FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g/sub m/=450 mS/mm and f/sub T/=9 GHz. The GaAs-based planar structure consists of a modulated-barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200, and the FET performance is characterized by g/sub m/=250 mS/mm, f/sub T/=12 GHz, and f/sub max/=21 GHz.<<ETX>>\",\"PeriodicalId\":445524,\"journal\":{\"name\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"volume\":\"641 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1989.79853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

两种不同的集成方案的前端光接收器已经证明了GaAs和inp为基础的材料系统。基于inp的p-i-n场效应管垂直集成电路的带宽大于2ghz。FET表现出外部g/sub m/=450 mS/mm和f/sub T/=9 GHz的特性。基于砷化镓的平面结构由调制势垒光电二极管和具有相同外延层的掺杂沟道场效应管组成。该探测器的光增益为200,FET性能表征为g/sub m/=250 mS/mm, f/sub T/=12 GHz, f/sub max/=21 GHz

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Monolithically integrated GaAs-based and InP-based front-end photoreceivers

Two different integration schemes for front-end optical receivers have been demonstrated for GaAs- and InP-based material systems. An InP-based p-i-n FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g/sub m/=450 mS/mm and f/sub T/=9 GHz. The GaAs-based planar structure consists of a modulated-barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200, and the FET performance is characterized by g/sub m/=250 mS/mm, f/sub T/=12 GHz, and f/sub max/=21 GHz.<>

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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