Monolithically integrated GaAs-based and InP-based front-end photoreceivers

Abstract

Two different integration schemes for front-end optical receivers have been demonstrated for GaAs- and InP-based material systems. An InP-based p-i-n FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g/sub m/=450 mS/mm and f/sub T/=9 GHz. The GaAs-based planar structure consists of a modulated-barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200, and the FET performance is characterized by g/sub m/=250 mS/mm, f/sub T/=12 GHz, and f/sub max/=21 GHz.<>