量子阱共振隧穿晶体管

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79842

A. Seabaugh, W. Frensley, Y. Kao, J. Randall, M. Reed

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引用次数: 8

摘要

作者展示了双极谐振隧道晶体管，并提出了与谐振隧道二极管的量子阱直接接触而形成的单极晶体管。研究了这种共振隧道热电子晶体管(RHET)，即量子激发态隧道晶体管(QuESTT)的特性。讨论了这些器件的数字和微波应用。

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Quantum-well resonant-tunneling transistors

The authors demonstrate bipolar resonant-tunneling transistors and propose unipolar transistors which are formed by making direct contact with the quantum well of a resonant-tunneling diode structure. The characteristics of this resonant-tunneling hot electron transistor (RHET), known as the QuESTT (quantum excited-state tunneling transistor), are examined. Both digital and microwave applications for these devices are discussed.<>

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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