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2022 28th International Semiconductor Laser Conference (ISLC)最新文献

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Full-scale exfoliation of InGaN-based light-eMitting diodes via Microcavity-assisted crack propagation by using tensile-stressed Ni layers 利用拉伸应力Ni层微腔辅助裂纹扩展的ingan基发光二极管全尺寸剥落
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943440
Jung‐Hong Min, Tae-Hoon Jeong, Kwang Jae Lee, J. Min, Tae-Yong Park, T. Ng, B. Ooi
{"title":"Full-scale exfoliation of InGaN-based light-eMitting diodes via Microcavity-assisted crack propagation by using tensile-stressed Ni layers","authors":"Jung‐Hong Min, Tae-Hoon Jeong, Kwang Jae Lee, J. Min, Tae-Yong Park, T. Ng, B. Ooi","doi":"10.23919/ISLC52947.2022.9943440","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943440","url":null,"abstract":"We demonstrated microcavity-assisted crack propagation for the full-scale exfoliation of a InGaN-based light-emitting diode (LED) membrane by using nanoporous structures and tensile-stressed Ni layers. The blue LED membrane was transferred on a glass slide by using an adhesive bonding and showed good performance.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121259634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic DBR/Ring Tunable Laser Employing $boldsymbol{1times 2}$ MMI-coupled Ring Resonator 采用$boldsymbol{1times 2}$ mmi耦合环形谐振器的单片DBR/环形可调谐激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943451
Y. Terada, Yuuki Isobe, Hiroshi Abe, Tatsuhiro Sakai, M. Nishita, H. Ishii, T. Kurobe
{"title":"Monolithic DBR/Ring Tunable Laser Employing $boldsymbol{1times 2}$ MMI-coupled Ring Resonator","authors":"Y. Terada, Yuuki Isobe, Hiroshi Abe, Tatsuhiro Sakai, M. Nishita, H. Ishii, T. Kurobe","doi":"10.23919/ISLC52947.2022.9943451","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943451","url":null,"abstract":"A wavelength tunable DBR/Ring laser employing a novel $1times 2$ MMI -coupled ring resonator has been developed to obtain robust fabrication tolerance. The fabricated laser can operate in extended C-band with output power of 18 dBm, SMSR of 40 dB, and tuning range of 54 nm.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115921144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-power single-mode multijunction VCSEL 大功率单模多结VCSEL
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943419
M. Dummer, A. Ghods, K. Tatah, K. Johnson
{"title":"High-power single-mode multijunction VCSEL","authors":"M. Dummer, A. Ghods, K. Tatah, K. Johnson","doi":"10.23919/ISLC52947.2022.9943419","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943419","url":null,"abstract":"We demonstrate a single mode 940nm VCSEL with a five-junction bipolar cascade active region. The device achieves 11 mW output power and 44 dB sidemode suppression ratio under continuous wave, room temperature operation. Peak power conversion and slope efficiency are 51% and 5.4 W/ A, respectively.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122861659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heterogeneously Integrated III/V-on-Si Injection Seeding Laser Neuron 异质集成III/V-on-Si注射播种激光神经元
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943399
B. Tossoun, D. Liang, R. Beausoleil
{"title":"Heterogeneously Integrated III/V-on-Si Injection Seeding Laser Neuron","authors":"B. Tossoun, D. Liang, R. Beausoleil","doi":"10.23919/ISLC52947.2022.9943399","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943399","url":null,"abstract":"We implement the first on-chip all-optical neuron on silicon by injection seeding a III/V-on-Si microring laser. The output of the laser at a selected wavelength resembles a sigmoid function and can be integrated as the non-linear activation function within a silicon photonic neural network.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123161671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical Investigation of High-Speed Surface-Normal Modulator Using InP High-Contrast Grating 采用InP高对比度光栅的高速表面法向调制器的数值研究
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943427
Taichiro Fukui, K. Sumita, M. Takenaka, S. Takagi, Y. Nakano, Takuo Tanemura
{"title":"Numerical Investigation of High-Speed Surface-Normal Modulator Using InP High-Contrast Grating","authors":"Taichiro Fukui, K. Sumita, M. Takenaka, S. Takagi, Y. Nakano, Takuo Tanemura","doi":"10.23919/ISLC52947.2022.9943427","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943427","url":null,"abstract":"We propose a surface-normal optical modulator using an InP high-contrast grating embedded with electro-optic polymer. The feasibility of broad-bandwidth (>40 GHz) and low-loss (<0.22 dB) modulation is numerically demonstrated, thanks to the high electron mobility and the small optical absorption of n- InP.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128711739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-speed and wide repetition rate tuning of dual-tone optically injected mode-locked quantum-dot lasers 双音光注入锁模量子点激光器的高速宽重复频率调谐
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943449
Ana Filipa Ribeiro, Tiago Gomes, M. Cataluna
{"title":"High-speed and wide repetition rate tuning of dual-tone optically injected mode-locked quantum-dot lasers","authors":"Ana Filipa Ribeiro, Tiago Gomes, M. Cataluna","doi":"10.23919/ISLC52947.2022.9943449","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943449","url":null,"abstract":"We demonstrate dual-tone optical injection for the control and high-speed modulation of a mode-locked laser's repetition rate. We achieve modulation rates reaching MHz frequencies and the highest continuous repetition rate tunability and ratio reported to date for a monolithic mode-locked laser (480 MHz, 2.4% respectively).","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114711144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Epitaxially Regrown Quantum Dot Photonic Crystal Surface Emitting Laser 外延再生量子点光子晶体表面发射激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943442
A. M. Kyaw, B. King, A. McKenzie, N. Gerrard, Z. Bian, Daehyun Kim, J. Liu, Xingyu Zhao, K. Nishi, K. Takemasa, M. Sugawara, D. Childs, Calum H. Hill, R. J. Taylor, R. Hogg
{"title":"Epitaxially Regrown Quantum Dot Photonic Crystal Surface Emitting Laser","authors":"A. M. Kyaw, B. King, A. McKenzie, N. Gerrard, Z. Bian, Daehyun Kim, J. Liu, Xingyu Zhao, K. Nishi, K. Takemasa, M. Sugawara, D. Childs, Calum H. Hill, R. J. Taylor, R. Hogg","doi":"10.23919/ISLC52947.2022.9943442","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943442","url":null,"abstract":"Quantum dot based epitaxially regrown photonic crystal surface-emitting lasers (PCSELs) are demonstrated at room temperature. The GaAs based devices exhibit ground-state lasing at~ 1230 nm and excited-state lasing at~ 1140 nm with threshold current densities of 0.69 $text{kA}/text{cm}^{2}$ and 1.05 $text{kA}/text{cm}^{2}$, respectively.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114267380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
VCSEL How Was it Born and Grown Since One-Century After Edison? 爱迪生一个世纪后，它是如何诞生和发展的?
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943438
K. Iga
{"title":"VCSEL How Was it Born and Grown Since One-Century After Edison?","authors":"K. Iga","doi":"10.23919/ISLC52947.2022.9943438","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943438","url":null,"abstract":"In this lecture we first present how the basic concept of vertical-cavity surface-emitting laser, VCSEL (pronounced as [vic-cell]) was born in 1977. It was just an inspiration after a considerable struggle to discover a laser that realizes; (i) single mode, (ii) monolithic manufacturability, and (iii) frequency reproducibility. Secondly, we focus on the physics that led to the VCSEL industry today. Thirdly, we describe their mode behaviors for their applications in communication and sensing. Lastly, we survey the VCSEL application systems from high-speed LANs in Data Communications, computer mouse, 3D face recognition in mobile phones, LiDAR in automotive and home appliance and industrial heating and so.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129091252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Faster and Longer 更快更长
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943469
Y. Yoshikuni
{"title":"Faster and Longer","authors":"Y. Yoshikuni","doi":"10.23919/ISLC52947.2022.9943469","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943469","url":null,"abstract":"Although the fiber optic backbone had been completed, R&D of semiconductor lasers became more active with the goal of longer and faster transmissions. The $1.55 upmumathrm{m}$ band had contributed significantly to longer distances, but required a new challenge, the development of single-mode laser under high-speed modulations. The DFB enabled single mode lasing, however modulation-induced chirping was still a problem for higher speed. Modulation schemes were analyzed theoretically and experimentally to reduce the chirping. This study enabled high-speed transmission up to 10 Gb/s, but also revealed a fundamental trade-off between chirping linewidth and modulation speed. This trade-off, would limit transmission length and bitrate, promoted developments of new devices, including the external feedback laser, the multi-electrode DFB laser, and the EA integrated DFB laser.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127668954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Temperature Operation of Membrane Photonic Integrated Circuits with Buried-Ridge-Waveguide on Si 硅上埋脊波导薄膜光子集成电路的高温运行
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943308
W. Fang, Naoki Takahashi, T. Horikawa, Y. Ohiso, Ruihao Xue, Shunto Katsumi, T. Amemiya, N. Nishiyama
{"title":"High Temperature Operation of Membrane Photonic Integrated Circuits with Buried-Ridge-Waveguide on Si","authors":"W. Fang, Naoki Takahashi, T. Horikawa, Y. Ohiso, Ruihao Xue, Shunto Katsumi, T. Amemiya, N. Nishiyama","doi":"10.23919/ISLC52947.2022.9943308","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943308","url":null,"abstract":"We demonstrate a membrane photonic integrated circuit consists of membrane DFB laser and p-i-n photodiodes with buried-ridge-waveguide bonded on Si by a-Si assisted room-temperature surface-activated bonding. Over 1 mA photocurrent was detected and 25 Gbps data transmission was achieved at 25 °C.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129430398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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