外延再生量子点光子晶体表面发射激光器

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943442

A. M. Kyaw, B. King, A. McKenzie, N. Gerrard, Z. Bian, Daehyun Kim, J. Liu, Xingyu Zhao, K. Nishi, K. Takemasa, M. Sugawara, D. Childs, Calum H. Hill, R. J. Taylor, R. Hogg

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引用次数: 0

摘要

在室温下演示了基于量子点外延再生光子晶体表面发射激光器(PCSELs)。基于GaAs的器件在~ 1230 nm处显示基态激光，在~ 1140 nm处显示激发态激光，阈值电流密度分别为0.69 $\text{kA}/\text{cm}^{2}$和1.05 $\text{kA}/\text{cm}^{2}$。

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Epitaxially Regrown Quantum Dot Photonic Crystal Surface Emitting Laser

Quantum dot based epitaxially regrown photonic crystal surface-emitting lasers (PCSELs) are demonstrated at room temperature. The GaAs based devices exhibit ground-state lasing at~ 1230 nm and excited-state lasing at~ 1140 nm with threshold current densities of 0.69 $\text{kA}/\text{cm}^{2}$ and 1.05 $\text{kA}/\text{cm}^{2}$, respectively.

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2022 28th International Semiconductor Laser Conference (ISLC)

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