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2022 28th International Semiconductor Laser Conference (ISLC)最新文献

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Low-thermal-resistance by Decoupled Ridge Insulation Structure for hybrid GaInAsP/SOI ridge-waveguide lasers 去耦脊绝缘结构用于杂化GaInAsP/SOI脊波导激光器的低热阻研究
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943468
Moataz Eissa, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama
{"title":"Low-thermal-resistance by Decoupled Ridge Insulation Structure for hybrid GaInAsP/SOI ridge-waveguide lasers","authors":"Moataz Eissa, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama","doi":"10.23919/ISLC52947.2022.9943468","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943468","url":null,"abstract":"Low-thermal-resistance hybrid GaInAsP/SOI ridge-waveguide Fabry-Perot lasers were demonstrated. Novel ridge-insulation structure was introduced to enhance heat dissipation. Record low thermal resistance of 14.3 K/W were demonstrated at 2-mm-cavity length even on SOI with $3.0-mu mathrm{m}$-thick oxide layer.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115130847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advances in Long Wavelength Interband Cascade Lasers 长波带间级联激光器的研究进展
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943363
J. Massengale, Yixuan Shen, R. Yang, S. Hawkins, J. Klem
{"title":"Advances in Long Wavelength Interband Cascade Lasers","authors":"J. Massengale, Yixuan Shen, R. Yang, S. Hawkins, J. Klem","doi":"10.23919/ISLC52947.2022.9943363","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943363","url":null,"abstract":"We demonstrate significantly improved performance of InAs-based interband cascade lasers (ICLs) operating in extended wavelength regions covering <tex>$10-13 mu mathrm{m}$</tex> with threshold current densities (J<inf>th</inf>) as low as 12 A/cm<sup>2</sup> and continuous-wave (cw) output powers greater than 40 mW/facet.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128242918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Threshold $1.55 mumathrm{m}$-Band Quantum Dot Laser Diode with InP(311)B Substrate 低阈值$1.55 mumathrm{m}$带InP(311)B衬底量子点激光二极管
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943339
A. Matsumoto, K. Akahane, T. Umezawa, S. Nakajima, N. Yamamoto, A. Kanno
{"title":"Low Threshold $1.55 mumathrm{m}$-Band Quantum Dot Laser Diode with InP(311)B Substrate","authors":"A. Matsumoto, K. Akahane, T. Umezawa, S. Nakajima, N. Yamamoto, A. Kanno","doi":"10.23919/ISLC52947.2022.9943339","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943339","url":null,"abstract":"We successfully improved characteristics of ridge structured QD-LD and demonstrated threshold current of 9.5 mA and corresponding threshold current density of 0.34 kA/cm2, whose value was the lowest class previously reported as $1.55 mumathrm{m}$-band edge emitted type QD-LDs to the best of our knowledge.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130613179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Telecom micro-lasers grown on SOI by lateral epitaxy 横向外延在SOI上生长电信微激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943499
Ying Xue, Jie Li, Liying Lin, Zengshan Xing, K. Wong, K. Lau
{"title":"Telecom micro-lasers grown on SOI by lateral epitaxy","authors":"Ying Xue, Jie Li, Liying Lin, Zengshan Xing, K. Wong, K. Lau","doi":"10.23919/ISLC52947.2022.9943499","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943499","url":null,"abstract":"We report telecom micro-ring lasers selectively grown on industry-standard (001)-oriented silicon-on-insulator wafers using lateral aspect ratio trapping. Laser structures with InP claddings and lateral QW active region were grown. Micro-ring lasers with various dimensions feature a co-planar configuration with the Si device layer. Room temperature pulsed lasing with a low threshold of 20 $mu mathrm{J}/text{cm}^{2}$ was obtained.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121001142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High power 1.55 $boldsymbol{mumathrm{m}}$ DFB laser with GHz modulation capability for low-orbit optical communication system 用于低轨道光通信系统的高功率1.55 $boldsymbol{mu mathm {m}}$ DFB激光器，具有GHz调制能力
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943444
Te-Hua Liu, Hao-Tien Cheng, Hsiang-Chun Yen, Chee-Keong Yee, Yun-Cheng Yang, Guei-Ting Hsu, Chaoying Wu
{"title":"High power 1.55 $boldsymbol{mumathrm{m}}$ DFB laser with GHz modulation capability for low-orbit optical communication system","authors":"Te-Hua Liu, Hao-Tien Cheng, Hsiang-Chun Yen, Chee-Keong Yee, Yun-Cheng Yang, Guei-Ting Hsu, Chaoying Wu","doi":"10.23919/ISLC52947.2022.9943444","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943444","url":null,"abstract":"In this work, we develop and present a 1.55 $mu mathrm{m}$ DFB laser that demonstrates ultra-high optical power, excellent wavelength stability, high SMSR, narrow linewidth, and high-speed modulation capabilities. These features make it suitable for coherent light sources used in low-orbit satellite optical communications.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116161418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A recap of high performance AlGaInAs/InP laser development history 高性能AlGaInAs/InP激光器的发展历史
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943386
C. Zah
{"title":"A recap of high performance AlGaInAs/InP laser development history","authors":"C. Zah","doi":"10.23919/ISLC52947.2022.9943386","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943386","url":null,"abstract":"We review 1.3 $mu mathrm{m}$ AlGaInAs/InP laser development in the early 1990s for uncooled subscriber loop operations. A similar active design has been used to make 1.3- and $1.55-mu mathrm{m}$ VCSELs and $1.3-mu mathrm{m}$ directly modulated MQW DFB lasers for 100G Ethernet application in 2000s.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124317908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resonator Embedded Photonic Crystal Surface Emitting Lasers 谐振腔嵌入式光子晶体表面发射激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943455
Z. Bian, Xingyu Zhao, K. Rae, A. M. Kyaw, Daehyun Kim, A. McKenzie, B. King, J. Liu, S. Thoms, Paul Reynolds, N. Gerrard, J. Grant, J. Orchard, Calum H. Hill, Connor W. Munro, P. Ivanov, D. Childs, R. J. Taylor, R. Hogg
{"title":"Resonator Embedded Photonic Crystal Surface Emitting Lasers","authors":"Z. Bian, Xingyu Zhao, K. Rae, A. M. Kyaw, Daehyun Kim, A. McKenzie, B. King, J. Liu, S. Thoms, Paul Reynolds, N. Gerrard, J. Grant, J. Orchard, Calum H. Hill, Connor W. Munro, P. Ivanov, D. Childs, R. J. Taylor, R. Hogg","doi":"10.23919/ISLC52947.2022.9943455","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943455","url":null,"abstract":"Resonator embedded photonic crystal surface emitting lasers are reported. Reduced threshold current and enhanced slope efficiencies are demonstrated in InP-based 1310nm PCSELs. Band-structure analysis of 1550nm devices demonstrates that frequency selective cavity enhancement of band-edges (and hence lasing mode selection) may be obtained.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124077320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-temperature Operation of Membrane DR Lasers Integrated with Si Waveguide by Micro-transfer Printing Method 微转移印刷法集成硅波导的膜式DR激光器的高温工作
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943299
Y. Maeda, T. Aihara, T. Fujii, T. Hiraki, K. Takeda, T. Tsuchizawa, H. Sugiyama, Tomonari Sato, T. Segawa, Y. Ota, S. Iwamoto, Y. Arakawa, S. Matsuo
{"title":"High-temperature Operation of Membrane DR Lasers Integrated with Si Waveguide by Micro-transfer Printing Method","authors":"Y. Maeda, T. Aihara, T. Fujii, T. Hiraki, K. Takeda, T. Tsuchizawa, H. Sugiyama, Tomonari Sato, T. Segawa, Y. Ota, S. Iwamoto, Y. Arakawa, S. Matsuo","doi":"10.23919/ISLC52947.2022.9943299","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943299","url":null,"abstract":"We fabricate a membrane distributed-reflector lasers with a Si waveguide by using micro-transfer printing, achieving a low threshold current of 1.1-3.7 mA in a temperature range of $25-80^{circ}mathrm{C}$ and good optical coupling between the laser output and 220-nm-thick Si waveguides.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126539343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self-$Q$-switched photonic-crystal lasers with band-edge frequency gradation 带边频率渐变的自Q开关光子晶体激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943359
Takuya Inoue, Ryohei Morita, Kazuki Nigo, M. Yoshida, K. Ishizaki, M. de Zoysa, S. Noda
{"title":"Self-$Q$-switched photonic-crystal lasers with band-edge frequency gradation","authors":"Takuya Inoue, Ryohei Morita, Kazuki Nigo, M. Yoshida, K. Ishizaki, M. de Zoysa, S. Noda","doi":"10.23919/ISLC52947.2022.9943359","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943359","url":null,"abstract":"We propose a photonic-crystal surface-emitting laser with band-edge frequency gradation, which induces self-$Q$-switching operation without saturable absorbers. We experimentally demonstrate self-pulsation with a record-high peak power of > 80 W and a short pulse width of <30 ps in a 1-mm-diameter device.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130013133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetically switchable semiconductor microring laser with TE mode waveguide optical isolator 带TE模波导光隔离器的磁开关半导体微环激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943434
Reona Oshikiri, Yuka Kobayashi, H. Shimizu
{"title":"Magnetically switchable semiconductor microring laser with TE mode waveguide optical isolator","authors":"Reona Oshikiri, Yuka Kobayashi, H. Shimizu","doi":"10.23919/ISLC52947.2022.9943434","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943434","url":null,"abstract":"We report magnetically switchable operation of a semiconductor microring laser (radius of 30 $mu mathrm{m}$) integrated with TE mode waveguide optical isolator. This result opens a way to the optical memory applications by using nonvolatile property of the ferromagnetic metal, and on-chip light assisted magnetic recording.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134235620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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