发布求助
文献互助 智能选刊 最新文献

2022 28th International Semiconductor Laser Conference (ISLC)最新文献

筛选
英文 中文
Longitudinal mode control in $20-30 mumathrm{m}$ long cavity GaN-based VCSELs with a curved mirror 纵向模式控制在$20-30 mu mathm {m}$长腔gan基带曲面镜的vcsel
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943331
Jared A. Kearn, Tatsushi Hamaguchi, Kentaro Hayashi, M. Ohara, T. Makino, Maiko Ito, N. Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, S. Nagane, Koichi Sato, Yuki Nakamura, Y. Hoshina, R. Koda
{"title":"Longitudinal mode control in $20-30 mumathrm{m}$ long cavity GaN-based VCSELs with a curved mirror","authors":"Jared A. Kearn, Tatsushi Hamaguchi, Kentaro Hayashi, M. Ohara, T. Makino, Maiko Ito, N. Kobayashi, Tatsuro Jyokawa, Eiji Nakayama, S. Nagane, Koichi Sato, Yuki Nakamura, Y. Hoshina, R. Koda","doi":"10.23919/ISLC52947.2022.9943331","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943331","url":null,"abstract":"A single cavity filtering mirror was used to demonstrate single longitudinal mode operation for a VCSEL with a $sim 25 mu mathrm{m}$ cavity length. The 443.5 nm lasing peak had an SMSR of 42 dB at 9 mA, 70kA/cm2.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132688886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-mechanical 3D LiDAR system based on flash and beam-scanning dually-modulated photonic-crystal lasers 基于闪光和波束扫描双调制光子晶体激光器的非机械三维激光雷达系统
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943360
Menaka De Zoys, R. Sakata, K. Ishizaki, Takuya Inoue, M. Yoshida, John Gelleta, Yoshiyuki Mineyama, T. Akahori, S. Aoyama, S. Noda
{"title":"Non-mechanical 3D LiDAR system based on flash and beam-scanning dually-modulated photonic-crystal lasers","authors":"Menaka De Zoys, R. Sakata, K. Ishizaki, Takuya Inoue, M. Yoshida, John Gelleta, Yoshiyuki Mineyama, T. Akahori, S. Aoyama, S. Noda","doi":"10.23919/ISLC52947.2022.9943360","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943360","url":null,"abstract":"We report a new type of non-mechanical three-dimensional (3D) light detection and ranging (LiDAR) system, which integrates a beam-scanning-type and flash-type dually modulated photonic-crystal laser sources, having a size as small as the palm of the hand. The system is capable of measuring poorly reflective objects in the field of view, overcoming the intrinsic issue affecting conventional flash-type LiDAR systems.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131649235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ reflectivity spectra measurements of GaN-Based VCSELs 氮化镓基vcsel的原位反射率光谱测量
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943302
T. Nagasawa, K. Shibata, K. Kobayashi, R. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama
{"title":"In-situ reflectivity spectra measurements of GaN-Based VCSELs","authors":"T. Nagasawa, K. Shibata, K. Kobayashi, R. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama","doi":"10.23919/ISLC52947.2022.9943302","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943302","url":null,"abstract":"We measured in-situ reflectivity intensity at a resonance wavelength as a function of a GaN cavity length on an AlINN/GaN DBR. The reflectivity intensity oscillation at the resonance wavelength was observed, suggesting that an accurate cavity length control is possible.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122223445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
56 GBd high power InP EAM chip for hybrid integration 用于混合集成的56gbd高功率InP EAM芯片
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943335
J. Gatzmann, M. Moehrle, U. Troppenz, A. Sigmund, M. Schell
{"title":"56 GBd high power InP EAM chip for hybrid integration","authors":"J. Gatzmann, M. Moehrle, U. Troppenz, A. Sigmund, M. Schell","doi":"10.23919/ISLC52947.2022.9943335","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943335","url":null,"abstract":"We demonstrate an InP EAM chip with high (> 5 mW) fibre-coupled output power, large (> 35 GHz) bandwidth, and wide (>15 nm) wavelength range. The BH device includes integrated amplifiers with spot size converters at in- and output supporting hybrid integration with e.g. tunable lasers or PICs.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123661997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metasurfaces integrated photonic-crystal surface-emitting lasers with variational emission angles 变发射角超表面集成光子晶体表面发射激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943332
Lih-Ren Chen, Chia-Jui Chang, W. Weng, Yao-Wei Huang, T. Lu
{"title":"Metasurfaces integrated photonic-crystal surface-emitting lasers with variational emission angles","authors":"Lih-Ren Chen, Chia-Jui Chang, W. Weng, Yao-Wei Huang, T. Lu","doi":"10.23919/ISLC52947.2022.9943332","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943332","url":null,"abstract":"Photonic-Crystal Surface-Emitting Laser (PCSEL) combined with metasurfaces is demonstrated to deliver various emission angle while retains the small beam divergence. The combination of the high power PCSELs and metasurfaces holds the promise of applications such as 3D sensing and Lidar.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127957979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Birth of Single-Mode Diode Laser at Minimal Loss Band 最小损耗带单模二极管激光器的诞生
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943423
Y. Suematsu
{"title":"Birth of Single-Mode Diode Laser at Minimal Loss Band","authors":"Y. Suematsu","doi":"10.23919/ISLC52947.2022.9943423","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943423","url":null,"abstract":"There were two possibilities, namely GaInAsP/InP or AlGaAsSb/GaSb, to create a semiconductor laser operating at possible minimal loss band of silica fiber, as suggested by Donald Keck to be around $1.4-1.7upmumathrm{m}$, in 1973. There was no rigorous reason for their selection, however the former was dare chosen after pointless argument, considering its higher melting temperature. In the early 1979, the minimal loss wavelength was found to be $1.55upmumathrm{m}$ and occasionally, in that summer, the RT-CW operations at this targeted band were achieved by overcoming the barrier of anti-melt back. As extensions, the phase-shift distributed feedback laser was achieved its realization, and the electro-tunable laser was demonstrated, in 1983.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121122527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid modeling technique for on-chip extended cavity semiconductor mode-locked lasers 片上扩展腔半导体锁模激光器的混合建模技术
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943336
M. Torreele, S. Cuyvers, Tom Reep, K. Van Gasse, E. Bente, B. Kuyken
{"title":"Hybrid modeling technique for on-chip extended cavity semiconductor mode-locked lasers","authors":"M. Torreele, S. Cuyvers, Tom Reep, K. Van Gasse, E. Bente, B. Kuyken","doi":"10.23919/ISLC52947.2022.9943336","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943336","url":null,"abstract":"This work presents a hybrid modeling technique to simulate extended cavity semiconductor mode-locked lasers, using a combination of traveling wave equations with the nonlinear Schrödinger equation. The simulations are compared to and show correspondence with experimental results from a III-V-on-silicon mode-locked laser.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126041639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly stacked InAs quantum dots on InP/InGaAlAs distributed Bragg reflector for VCSEL 应用于VCSEL的InP/InGaAlAs分布式Bragg反射器上的高度堆叠InAs量子点
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943324
K. Akahane, A. Matsumoto, T. Umezawa, N. Yamamoto, A. Kanno
{"title":"Highly stacked InAs quantum dots on InP/InGaAlAs distributed Bragg reflector for VCSEL","authors":"K. Akahane, A. Matsumoto, T. Umezawa, N. Yamamoto, A. Kanno","doi":"10.23919/ISLC52947.2022.9943324","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943324","url":null,"abstract":"A high-reflectivity DBR was fabricated using a highly stacked InP/InGaAlAs structure. In addition, a highly stacked QD structure using a strain compensation technique was grown on an InP/InGaAlAs DBR. More than 99 % reflectivity was obtained in 42 pairs of DBR.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115657867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogen cleaning for high-quality conductive AlInN/GaN DBRs 高品质导电alin /GaN dbr的氢清洗
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943305
K. Shibata, Tsuyoshi Nagasawa, T. Takeuchi, S. Kamiyama, M. Iwaya
{"title":"Hydrogen cleaning for high-quality conductive AlInN/GaN DBRs","authors":"K. Shibata, Tsuyoshi Nagasawa, T. Takeuchi, S. Kamiyama, M. Iwaya","doi":"10.23919/ISLC52947.2022.9943305","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943305","url":null,"abstract":"We introduced hydrogen cleaning to a fabrication of n-type conductive AlInN/GaN DBRs to achieve both high conductivity and high material quality, resulting in a 40-pair conductive AlInN/GaN DBR with a low vertical resistance and a much lower surface pit density attributed to threading dislocations.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128854263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyzing the Bottleneck AlGaN-based UV-B Laser Diode With a 2D Electro-optical Numerical Model 用二维电光数值模型分析瓶颈型氮化镓UV-B激光二极管
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943424
Yunjun Cheng, Yu-Tai Lin, Yuh‐Renn Wu
{"title":"Analyzing the Bottleneck AlGaN-based UV-B Laser Diode With a 2D Electro-optical Numerical Model","authors":"Yunjun Cheng, Yu-Tai Lin, Yuh‐Renn Wu","doi":"10.23919/ISLC52947.2022.9943424","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943424","url":null,"abstract":"This study uses the 2D model to analyze the misalignment between the optical mode and gain distribution due to the current crowding. The reason for the high threshold current density in the reported experimental results [1], [2] is found, and a possible adjustment will be proposed.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"653 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116094372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信