Highly stacked InAs quantum dots on InP/InGaAlAs distributed Bragg reflector for VCSEL

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943324

K. Akahane, A. Matsumoto, T. Umezawa, N. Yamamoto, A. Kanno

引用次数: 0

Abstract

A high-reflectivity DBR was fabricated using a highly stacked InP/InGaAlAs structure. In addition, a highly stacked QD structure using a strain compensation technique was grown on an InP/InGaAlAs DBR. More than 99 % reflectivity was obtained in 42 pairs of DBR.

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应用于VCSEL的InP/InGaAlAs分布式Bragg反射器上的高度堆叠InAs量子点

采用高度堆叠的InP/InGaAlAs结构制备了高反射率DBR。此外，利用应变补偿技术在InP/InGaAlAs DBR上生长出高度堆叠的量子点结构。42对DBR的反射率大于99%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 28th International Semiconductor Laser Conference (ISLC)

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