K. Shibata, Tsuyoshi Nagasawa, T. Takeuchi, S. Kamiyama, M. Iwaya
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引用次数: 0
Abstract
We introduced hydrogen cleaning to a fabrication of n-type conductive AlInN/GaN DBRs to achieve both high conductivity and high material quality, resulting in a 40-pair conductive AlInN/GaN DBR with a low vertical resistance and a much lower surface pit density attributed to threading dislocations.