氮化镓基vcsel的原位反射率光谱测量

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943302

T. Nagasawa, K. Shibata, K. Kobayashi, R. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama

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引用次数: 0

摘要

我们在AlINN/GaN DBR上测量了谐振波长处的原位反射率强度作为GaN腔长度的函数。观察到谐振波长处的反射率强度振荡，表明精确的腔长控制是可能的。

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In-situ reflectivity spectra measurements of GaN-Based VCSELs

We measured in-situ reflectivity intensity at a resonance wavelength as a function of a GaN cavity length on an AlINN/GaN DBR. The reflectivity intensity oscillation at the resonance wavelength was observed, suggesting that an accurate cavity length control is possible.

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2022 28th International Semiconductor Laser Conference (ISLC)

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