用于混合集成的56gbd高功率InP EAM芯片

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943335

J. Gatzmann, M. Moehrle, U. Troppenz, A. Sigmund, M. Schell

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引用次数: 0

摘要

我们展示了一种具有高(> 5 mW)光纤耦合输出功率，大(> 35 GHz)带宽和宽(>15 nm)波长范围的InP EAM芯片。BH器件包括集成放大器，在输入和输出端具有光斑尺寸转换器，支持与可调谐激光器或pic等混合集成。

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56 GBd high power InP EAM chip for hybrid integration

We demonstrate an InP EAM chip with high (> 5 mW) fibre-coupled output power, large (> 35 GHz) bandwidth, and wide (>15 nm) wavelength range. The BH device includes integrated amplifiers with spot size converters at in- and output supporting hybrid integration with e.g. tunable lasers or PICs.

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2022 28th International Semiconductor Laser Conference (ISLC)

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