高品质导电alin /GaN dbr的氢清洗

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943305

K. Shibata, Tsuyoshi Nagasawa, T. Takeuchi, S. Kamiyama, M. Iwaya

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引用次数: 0

摘要

我们将氢清洗引入到n型导电AlInN/GaN DBR的制造中，以实现高导电性和高材料质量，从而产生40对导电AlInN/GaN DBR，具有低垂直电阻和低表面坑密度，这是由于螺纹位错造成的。

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Hydrogen cleaning for high-quality conductive AlInN/GaN DBRs

We introduced hydrogen cleaning to a fabrication of n-type conductive AlInN/GaN DBRs to achieve both high conductivity and high material quality, resulting in a 40-pair conductive AlInN/GaN DBR with a low vertical resistance and a much lower surface pit density attributed to threading dislocations.

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2022 28th International Semiconductor Laser Conference (ISLC)

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