低阈值$1.55\ \mu\mathrm{m}$带InP(311)B衬底量子点激光二极管

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943339

A. Matsumoto, K. Akahane, T. Umezawa, S. Nakajima, N. Yamamoto, A. Kanno

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引用次数: 1

摘要

我们成功地改进了脊状结构QD-LD的特性，并证明了阈值电流为9.5 mA，相应的阈值电流密度为0.34 kA/cm2，其值是我们所知的最低级别的$1.55 \mu\mathrm{m}$带边缘发射型QD-LD。

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Low Threshold $1.55\ \mu\mathrm{m}$-Band Quantum Dot Laser Diode with InP(311)B Substrate

We successfully improved characteristics of ridge structured QD-LD and demonstrated threshold current of 9.5 mA and corresponding threshold current density of 0.34 kA/cm2, whose value was the lowest class previously reported as $1.55 \mu\mathrm{m}$-band edge emitted type QD-LDs to the best of our knowledge.

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2022 28th International Semiconductor Laser Conference (ISLC)

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