Telecom micro-lasers grown on SOI by lateral epitaxy

Abstract

We report telecom micro-ring lasers selectively grown on industry-standard (001)-oriented silicon-on-insulator wafers using lateral aspect ratio trapping. Laser structures with InP claddings and lateral QW active region were grown. Micro-ring lasers with various dimensions feature a co-planar configuration with the Si device layer. Room temperature pulsed lasing with a low threshold of 20 $\mu \mathrm{J}/\text{cm}^{2}$ was obtained.