高性能AlGaInAs/InP激光器的发展历史

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943386

C. Zah

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引用次数: 0

摘要

我们回顾了1.3 $\mu \ mathm {m}$ AlGaInAs/InP激光器在20世纪90年代早期用于非冷却用户环路操作的发展。类似的有源设计已用于制造1.3-和1.55-\mu \ mathm {m}$ vcsel和1.3-\mu \ mathm {m}$直接调制的MQW DFB激光器，用于2000年代的100G以太网应用。

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A recap of high performance AlGaInAs/InP laser development history

We review 1.3 $\mu \mathrm{m}$ AlGaInAs/InP laser development in the early 1990s for uncooled subscriber loop operations. A similar active design has been used to make 1.3- and $1.55-\mu \mathrm{m}$ VCSELs and $1.3-\mu \mathrm{m}$ directly modulated MQW DFB lasers for 100G Ethernet application in 2000s.

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2022 28th International Semiconductor Laser Conference (ISLC)

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