横向外延在SOI上生长电信微激光器

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943499

Ying Xue, Jie Li, Liying Lin, Zengshan Xing, K. Wong, K. Lau

{"title":"横向外延在SOI上生长电信微激光器","authors":"Ying Xue, Jie Li, Liying Lin, Zengshan Xing, K. Wong, K. Lau","doi":"10.23919/ISLC52947.2022.9943499","DOIUrl":null,"url":null,"abstract":"We report telecom micro-ring lasers selectively grown on industry-standard (001)-oriented silicon-on-insulator wafers using lateral aspect ratio trapping. Laser structures with InP claddings and lateral QW active region were grown. Micro-ring lasers with various dimensions feature a co-planar configuration with the Si device layer. Room temperature pulsed lasing with a low threshold of 20 $\\mu \\mathrm{J}/\\text{cm}^{2}$ was obtained.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Telecom micro-lasers grown on SOI by lateral epitaxy\",\"authors\":\"Ying Xue, Jie Li, Liying Lin, Zengshan Xing, K. Wong, K. Lau\",\"doi\":\"10.23919/ISLC52947.2022.9943499\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report telecom micro-ring lasers selectively grown on industry-standard (001)-oriented silicon-on-insulator wafers using lateral aspect ratio trapping. Laser structures with InP claddings and lateral QW active region were grown. Micro-ring lasers with various dimensions feature a co-planar configuration with the Si device layer. Room temperature pulsed lasing with a low threshold of 20 $\\\\mu \\\\mathrm{J}/\\\\text{cm}^{2}$ was obtained.\",\"PeriodicalId\":443954,\"journal\":{\"name\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"volume\":\"11 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISLC52947.2022.9943499\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 28th International Semiconductor Laser Conference (ISLC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISLC52947.2022.9943499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了电信微环激光器选择性地生长在工业标准(001)取向绝缘体上的硅晶圆上，使用横向纵横比捕获。生长了具有InP包层和横向量子阱活性区的激光结构。不同尺寸的微环激光器具有与硅器件层共面结构。获得了低阈值为20 $\mu \mathrm{J}/\text{cm}^{2}$的室温脉冲激光。

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Telecom micro-lasers grown on SOI by lateral epitaxy

We report telecom micro-ring lasers selectively grown on industry-standard (001)-oriented silicon-on-insulator wafers using lateral aspect ratio trapping. Laser structures with InP claddings and lateral QW active region were grown. Micro-ring lasers with various dimensions feature a co-planar configuration with the Si device layer. Room temperature pulsed lasing with a low threshold of 20 $\mu \mathrm{J}/\text{cm}^{2}$ was obtained.

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2022 28th International Semiconductor Laser Conference (ISLC)

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