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2022 28th International Semiconductor Laser Conference (ISLC)最新文献

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Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures ii型gaas基“W”激光器结构中光学增益的温度依赖性降低
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943462
D. A. Duffy, I. Marko, C. Fuchs, T. Hepp, J. Lehr, K. Volz, W. Stolz, S. Sweeney
{"title":"Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures","authors":"D. A. Duffy, I. Marko, C. Fuchs, T. Hepp, J. Lehr, K. Volz, W. Stolz, S. Sweeney","doi":"10.23919/ISLC52947.2022.9943462","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943462","url":null,"abstract":"We investigate the temperature-dependence of modal gain for type-II (GaIn)As/Ga(AsSb) “W”-laser structures operating around the O-band. Measurements show their potential to control the temperature dependence of the gain due to carrier-induced band bending effects. This is of interest to semiconductor laser and optical amplifier applications.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129075822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Infinitely scalable single-mode Berkeley Surface Emitting Laser (BerkSELs) 无限扩展单模伯克利表面发射激光器(BerkSELs)
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943453
R. Contractor, W. Noh, W. Redjem, E. Martin, Wayesh Qarony, B. Kanté
{"title":"Infinitely scalable single-mode Berkeley Surface Emitting Laser (BerkSELs)","authors":"R. Contractor, W. Noh, W. Redjem, E. Martin, Wayesh Qarony, B. Kanté","doi":"10.23919/ISLC52947.2022.9943453","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943453","url":null,"abstract":"We report theoretically and experimentally open-Dirac cavities that exploit symmetry-dependent scaling of losses in cavities with a linear dispersion. We experimentally demonstrate that single-mode lasing from surface emitting lasers operating around the open-Dirac singularity is maintained even when the cavity is scaled up to arbitrary sizes. Our work constitutes the first scale-invariant surface emitting laser.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127684367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generation of Various Beam Patterns based on Dually Modulated Photonic-crystal Surface-emitting Lasers 基于双调制光子晶体表面发射激光器的各种光束模式的产生
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943355
Ryoichi Sakat, K. Ishizaki, M. de Zoysa, Takuya Inoue, Akira Imamura, Hairu Zhao, S. Noda
{"title":"Generation of Various Beam Patterns based on Dually Modulated Photonic-crystal Surface-emitting Lasers","authors":"Ryoichi Sakat, K. Ishizaki, M. de Zoysa, Takuya Inoue, Akira Imamura, Hairu Zhao, S. Noda","doi":"10.23919/ISLC52947.2022.9943355","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943355","url":null,"abstract":"We demonstrate the emission of laser beams with arbitrarily designed patterns from single chips without using external optical elements, based on dually modulated photonic-crystal surface-emitting lasers. Various beam patterns, including multiple dots, flash, letters, and even a detailed image, are successfully emitted.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117018334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated-photonic device serving as both external laser mirror and input grating coupler 集成光子器件，既可作为外部激光反射镜又可作为输入光栅耦合器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943344
Keisuke Ozawa, Ryohei Ueda, Aika Taniguchi, Akari Watanabe, Shunsuke Teranishi, J. Inoue, K. Kintaka, S. Ura
{"title":"Integrated-photonic device serving as both external laser mirror and input grating coupler","authors":"Keisuke Ozawa, Ryohei Ueda, Aika Taniguchi, Akari Watanabe, Shunsuke Teranishi, J. Inoue, K. Kintaka, S. Ura","doi":"10.23919/ISLC52947.2022.9943344","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943344","url":null,"abstract":"A guided-mode-resonance device was designed and fabricated for wavelength-selective retroreflection and waveguide input coupling. This device consists of two kinds of waveguide gratings on a high-reflection substrate. Wavelength-stabilized laser oscillation with a gain chip and simultaneous input coupling to a waveguide were demonstrated successfully.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126853189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
III-V Quantum Dot Lasers on Silicon by Selective Area Heteroepitaxy 选择性面积异质外延在硅上的III-V量子点激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943415
Bei Shi, Si Zhu, B. Song, J. Klamkin
{"title":"III-V Quantum Dot Lasers on Silicon by Selective Area Heteroepitaxy","authors":"Bei Shi, Si Zhu, B. Song, J. Klamkin","doi":"10.23919/ISLC52947.2022.9943415","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943415","url":null,"abstract":"We present our recent progress on III-V lasers selectively grown on flat-bottom and nano V-groove patterned silicon substrates inside silicon dioxide recesses. This selective area heteroepitaxy (SAH) approach is disruptive for monolithic integration of III-V photonic devices on silicon photonic and microelectronic platforms.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126316296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectral Linewidth of Photonic Crystal Surface Emitting Lasers 光子晶体表面发射激光器的谱线宽度
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943393
Bruce Saleeb-Mousa, Duncan Spence, M. Haji, J. Liu, S. Watson, R. Hogg, Anna O'Dowd, Calum H. Hill, D. Childs, R. J. Taylor
{"title":"Spectral Linewidth of Photonic Crystal Surface Emitting Lasers","authors":"Bruce Saleeb-Mousa, Duncan Spence, M. Haji, J. Liu, S. Watson, R. Hogg, Anna O'Dowd, Calum H. Hill, D. Childs, R. J. Taylor","doi":"10.23919/ISLC52947.2022.9943393","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943393","url":null,"abstract":"The spectral linewidth of photonic crystal surface emitting lasers is evaluated using a heterodyne method utilizing two nominally identical devices. Linewidths of 100–200 kHz are obtained at modest output powers for these GaAs based 935 nm PCSELs. The natural linewidth is determined to be $71pm 30 text{kHz}$.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126928715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2 kW Pulse Power from Internal Wavelength Stabilized Diode Laser Bar for LiDAR Applications 激光雷达内部波长稳定二极管激光棒的2kw脉冲功率
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.1117/12.2649630
A. Knigg, N. Ammouri, H. Christopher, J. Glaab, A. Liero, J. Fricke, H. Wenzel
{"title":"2 kW Pulse Power from Internal Wavelength Stabilized Diode Laser Bar for LiDAR Applications","authors":"A. Knigg, N. Ammouri, H. Christopher, J. Glaab, A. Liero, J. Fricke, H. Wenzel","doi":"10.1117/12.2649630","DOIUrl":"https://doi.org/10.1117/12.2649630","url":null,"abstract":"We present a bipolar-cascade distributed-Bragg-reflector laser bar with an intended wavelength of 905 nm emitting 8 ns long pulses with 2 kW peak power at a current slightly above 1 kA into the third vertical mode. The spectral width of the pulses is 0.3 nm.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125452583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Well layer thickness dependence on threshold current of SCH-MQW laser diode grown on InP/Si substrate 在InP/Si衬底上生长的SCH-MQW激光二极管阱层厚度与阈值电流的关系
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943316
Ryosuke Yada, Kouji Agata, Liang Zhao, Singo Ito, Sae Aoki, Kazuhiko Simomura
{"title":"Well layer thickness dependence on threshold current of SCH-MQW laser diode grown on InP/Si substrate","authors":"Ryosuke Yada, Kouji Agata, Liang Zhao, Singo Ito, Sae Aoki, Kazuhiko Simomura","doi":"10.23919/ISLC52947.2022.9943316","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943316","url":null,"abstract":"Well layer thickness dependence on threshold current of SCH-MQW laser diode grown on InP/Si substrate was investigated. Threshold current density was decreased by increasing well thickness, and confirmed the difference characteristics of LDs on InP substrate.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"2311 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130327359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Wavelength Count Laser Sources for WDM CMOS Optical Interconnects 用于WDM CMOS光互连的高波长计数激光源
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943390
M. Sysak, R. Roucka, Manan Raval, F. Luna, Sally El-Henawy, J. Frey, Chen Li, Chong Zhang, Sriharsha Kota Pavan, Asif Anwar Baig Mirza, Li-Fan Yang, M. Wade, Chen Sun
{"title":"High Wavelength Count Laser Sources for WDM CMOS Optical Interconnects","authors":"M. Sysak, R. Roucka, Manan Raval, F. Luna, Sally El-Henawy, J. Frey, Chen Li, Chong Zhang, Sriharsha Kota Pavan, Asif Anwar Baig Mirza, Li-Fan Yang, M. Wade, Chen Sun","doi":"10.23919/ISLC52947.2022.9943390","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943390","url":null,"abstract":"We demonstrate a CW-WDM MSA compliant multi-wavelength source driving an error-free WDM CMOS optical link. The SuperNova™ operates up to 100°C and outputs 64 optical carriers (8 wavelengths x 8 fibers), and together with the TeraPHY™ chiplet, drives up to 2 Tbps from a CMOS die.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125633030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct Modulation of 16-ch Two-Dimensionally Arrayed Membrane Lasers on Si 硅上16-ch二维排列膜激光器的直接调制
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943403
T. Fujii, K. Takeda, Y. Maeda, Tomonari Sato, T. Tsuchizawa, T. Segawa, S. Matsuo
{"title":"Direct Modulation of 16-ch Two-Dimensionally Arrayed Membrane Lasers on Si","authors":"T. Fujii, K. Takeda, Y. Maeda, Tomonari Sato, T. Tsuchizawa, T. Segawa, S. Matsuo","doi":"10.23919/ISLC52947.2022.9943403","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943403","url":null,"abstract":"We fabricated a 16-ch membrane laser array on a Si chip with a small footprint of 1.11 $times 2.75text{mm}^{2}$. Optical output ports are placed on a front facet via SiOx waveguides. All lasers exhibit 32-Gbit/s direct modulation with a current of 17 mA.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"248 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133817876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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