III-V Quantum Dot Lasers on Silicon by Selective Area Heteroepitaxy

Abstract

We present our recent progress on III-V lasers selectively grown on flat-bottom and nano V-groove patterned silicon substrates inside silicon dioxide recesses. This selective area heteroepitaxy (SAH) approach is disruptive for monolithic integration of III-V photonic devices on silicon photonic and microelectronic platforms.