ii型gaas基“W”激光器结构中光学增益的温度依赖性降低

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943462

D. A. Duffy, I. Marko, C. Fuchs, T. Hepp, J. Lehr, K. Volz, W. Stolz, S. Sweeney

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引用次数: 0

摘要

我们研究了工作在o波段附近的ii型(gain)As/Ga(AsSb)“W”激光器结构模态增益的温度依赖性。测量表明，由于载流子引起的带弯曲效应，它们有可能控制增益对温度的依赖。这是半导体激光器和光放大器应用的兴趣。

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Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures

We investigate the temperature-dependence of modal gain for type-II (GaIn)As/Ga(AsSb) “W”-laser structures operating around the O-band. Measurements show their potential to control the temperature dependence of the gain due to carrier-induced band bending effects. This is of interest to semiconductor laser and optical amplifier applications.

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2022 28th International Semiconductor Laser Conference (ISLC)

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