Well layer thickness dependence on threshold current of SCH-MQW laser diode grown on InP/Si substrate

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943316

Ryosuke Yada, Kouji Agata, Liang Zhao, Singo Ito, Sae Aoki, Kazuhiko Simomura

引用次数: 0

Abstract

Well layer thickness dependence on threshold current of SCH-MQW laser diode grown on InP/Si substrate was investigated. Threshold current density was decreased by increasing well thickness, and confirmed the difference characteristics of LDs on InP substrate.

查看原文本刊更多论文

在InP/Si衬底上生长的SCH-MQW激光二极管阱层厚度与阈值电流的关系

研究了在InP/Si衬底上生长的SCH-MQW激光二极管的阱层厚度与阈值电流的关系。随着井厚的增加，阈值电流密度降低，证实了InP衬底上ld的差异特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2022 28th International Semiconductor Laser Conference (ISLC)

自引率

0.00%

发文量