选择性面积异质外延在硅上的III-V量子点激光器

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943415

Bei Shi, Si Zhu, B. Song, J. Klamkin

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引用次数: 0

摘要

我们介绍了在二氧化硅凹槽内的平面和纳米v型凹槽图案硅衬底上选择性生长III-V激光器的最新进展。这种选择性区域异质外延(SAH)方法对硅光子和微电子平台上III-V光子器件的单片集成具有破坏性。

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III-V Quantum Dot Lasers on Silicon by Selective Area Heteroepitaxy

We present our recent progress on III-V lasers selectively grown on flat-bottom and nano V-groove patterned silicon substrates inside silicon dioxide recesses. This selective area heteroepitaxy (SAH) approach is disruptive for monolithic integration of III-V photonic devices on silicon photonic and microelectronic platforms.

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2022 28th International Semiconductor Laser Conference (ISLC)

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