Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures

Abstract

We investigate the temperature-dependence of modal gain for type-II (GaIn)As/Ga(AsSb) “W”-laser structures operating around the O-band. Measurements show their potential to control the temperature dependence of the gain due to carrier-induced band bending effects. This is of interest to semiconductor laser and optical amplifier applications.