大功率单模多结VCSEL

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943419

M. Dummer, A. Ghods, K. Tatah, K. Johnson

{"title":"大功率单模多结VCSEL","authors":"M. Dummer, A. Ghods, K. Tatah, K. Johnson","doi":"10.23919/ISLC52947.2022.9943419","DOIUrl":null,"url":null,"abstract":"We demonstrate a single mode 940nm VCSEL with a five-junction bipolar cascade active region. The device achieves 11 mW output power and 44 dB sidemode suppression ratio under continuous wave, room temperature operation. Peak power conversion and slope efficiency are 51% and 5.4 W/ A, respectively.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-power single-mode multijunction VCSEL\",\"authors\":\"M. Dummer, A. Ghods, K. Tatah, K. Johnson\",\"doi\":\"10.23919/ISLC52947.2022.9943419\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a single mode 940nm VCSEL with a five-junction bipolar cascade active region. The device achieves 11 mW output power and 44 dB sidemode suppression ratio under continuous wave, room temperature operation. Peak power conversion and slope efficiency are 51% and 5.4 W/ A, respectively.\",\"PeriodicalId\":443954,\"journal\":{\"name\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISLC52947.2022.9943419\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 28th International Semiconductor Laser Conference (ISLC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISLC52947.2022.9943419","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们展示了一个具有五结双极级联有源区的单模940nm VCSEL。在连续波、室温工作下，器件输出功率为11mw，侧模抑制比为44db。峰值功率转换为51%，斜率效率为5.4 W/ A。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-power single-mode multijunction VCSEL

We demonstrate a single mode 940nm VCSEL with a five-junction bipolar cascade active region. The device achieves 11 mW output power and 44 dB sidemode suppression ratio under continuous wave, room temperature operation. Peak power conversion and slope efficiency are 51% and 5.4 W/ A, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 28th International Semiconductor Laser Conference (ISLC)

自引率

0.00%

发文量