利用拉伸应力Ni层微腔辅助裂纹扩展的ingan基发光二极管全尺寸剥落

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943440

Jung‐Hong Min, Tae-Hoon Jeong, Kwang Jae Lee, J. Min, Tae-Yong Park, T. Ng, B. Ooi

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引用次数: 0

摘要

通过纳米孔结构和拉伸应力Ni层，我们展示了微腔辅助的ingan基发光二极管(LED)膜全尺寸剥离的裂纹扩展。通过胶粘接将蓝光LED膜转移到玻璃载玻片上，显示出良好的性能。

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Full-scale exfoliation of InGaN-based light-eMitting diodes via Microcavity-assisted crack propagation by using tensile-stressed Ni layers

We demonstrated microcavity-assisted crack propagation for the full-scale exfoliation of a InGaN-based light-emitting diode (LED) membrane by using nanoporous structures and tensile-stressed Ni layers. The blue LED membrane was transferred on a glass slide by using an adhesive bonding and showed good performance.

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2022 28th International Semiconductor Laser Conference (ISLC)

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