High Temperature Operation of Membrane Photonic Integrated Circuits with Buried-Ridge-Waveguide on Si

Abstract

We demonstrate a membrane photonic integrated circuit consists of membrane DFB laser and p-i-n photodiodes with buried-ridge-waveguide bonded on Si by a-Si assisted room-temperature surface-activated bonding. Over 1 mA photocurrent was detected and 25 Gbps data transmission was achieved at 25 °C.