Epitaxially Regrown Quantum Dot Photonic Crystal Surface Emitting Laser

Abstract

Quantum dot based epitaxially regrown photonic crystal surface-emitting lasers (PCSELs) are demonstrated at room temperature. The GaAs based devices exhibit ground-state lasing at~ 1230 nm and excited-state lasing at~ 1140 nm with threshold current densities of 0.69 $\text{kA}/\text{cm}^{2}$ and 1.05 $\text{kA}/\text{cm}^{2}$, respectively.