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2022 28th International Semiconductor Laser Conference (ISLC)最新文献

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High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure 具有新型增强自对准横向结构的高亮度广域二极管激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943315
M. Elattar, O. Brox, P. Della Casa, A. Mogilatenko, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, P. Crump
{"title":"High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure","authors":"M. Elattar, O. Brox, P. Della Casa, A. Mogilatenko, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, P. Crump","doi":"10.23919/ISLC52947.2022.9943315","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943315","url":null,"abstract":"We present broad-area lasers with enhanced self-aligned lateral structure (eSAS) using current-blocking layers optimized for tunnel current suppression, integrated within the p-AlGaAs cladding using in-situ etching and epitaxial regrowth. Lateral leakage is tenfold reduced, for 30% lower threshold, higher peak efficiency, and improved beam parameters.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125689310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP-based $1.3 mumathrm{m}$ quantum dot laser 基于inp的$1.3 mu mathm {m}$量子点激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943326
Vinayakrishna Joshi, S. Bauer, V. Sichkovskyi, F. Schnabel, J. Reithmaier
{"title":"InP-based $1.3 mumathrm{m}$ quantum dot laser","authors":"Vinayakrishna Joshi, S. Bauer, V. Sichkovskyi, F. Schnabel, J. Reithmaier","doi":"10.23919/ISLC52947.2022.9943326","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943326","url":null,"abstract":"An InP based QD laser with InAs quantum dots (QDs) emitting at <tex>$1.3 mumathrm{m}$</tex> wavelength was realized. A high modal gain of 15 cm<sup>−1</sup> per QD layer, low internal absorption value of 11 cm<sup>−1</sup> and high internal quantum efficiency of 82% were obtained.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125479987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Continuous-wave Operation of GaSb-based Interband Cascade Lasers beyond $boldsymbol{6mu mathrm{m}}$ 超过$boldsymbol{6mu mathrm{m}}的基于gasb的带间级联激光器的连续波操作
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943516
Josephine Nauschütz, Hedwig Knötig, R. Weih, J. Scheuermann, B. Schwarz, S. Höfling
{"title":"Continuous-wave Operation of GaSb-based Interband Cascade Lasers beyond $boldsymbol{6mu mathrm{m}}$","authors":"Josephine Nauschütz, Hedwig Knötig, R. Weih, J. Scheuermann, B. Schwarz, S. Höfling","doi":"10.23919/ISLC52947.2022.9943516","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943516","url":null,"abstract":"GaSb-based Fabry-Pérot interband cascade lasers with a center emission wavelength of 6.12 $mu mathrm{m}$, showing the lowest reported threshold current density of 612 A/cm2 at this wavelength at room temperature are presented. An epi-side-down mounted device showed over 25 mW cw-output power at $20^{mathrm{o}}mathrm{C}$.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132655531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Progress in efforts to increase power in GaAs-based highpower diode lasers 提高gaas基高功率二极管激光器功率的进展
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943301
P. Crum, M. Elattar, M. J. Miah, J. Fricke, O. Brox, D. Martin, P. Della Casa, A. Maaßdorf, H. Wenzel, A. Knigge, G. Tränkle
{"title":"Progress in efforts to increase power in GaAs-based highpower diode lasers","authors":"P. Crum, M. Elattar, M. J. Miah, J. Fricke, O. Brox, D. Martin, P. Della Casa, A. Maaßdorf, H. Wenzel, A. Knigge, G. Tränkle","doi":"10.23919/ISLC52947.2022.9943301","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943301","url":null,"abstract":"Research into power-scaling in GaAs-based broad-area lasers is summarized, focusing on 940nm single emitters, increasing power by combining triply-asymmetric high-gain epitaxial designs with regrown lateral blocking. In parallel, power is increased by transitioning more laser types to highly asymmetric designs, illustrated with 970nm grating-stabilized bars.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132870524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coherent Antiguided High Contrast Grating VCSEL Array 相干反制导高对比度光栅VCSEL阵列
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943417
Yipeng Ji, Jonas Kapraun, Jianqiang Chen, Zhenglai Zhang, Shasha Li, Fangzhou Li, Haolin Li, Jiaxing Wang, Chihchiang Shen, C. Chang-Hasnain
{"title":"Coherent Antiguided High Contrast Grating VCSEL Array","authors":"Yipeng Ji, Jonas Kapraun, Jianqiang Chen, Zhenglai Zhang, Shasha Li, Fangzhou Li, Haolin Li, Jiaxing Wang, Chihchiang Shen, C. Chang-Hasnain","doi":"10.23919/ISLC52947.2022.9943417","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943417","url":null,"abstract":"We demonstrate coherent VCSEL arrays using a novel antiguided high contrast grating (HCG) structure that consists of two distinct HCG dimensions in one monolithic layer. Narrow single-lobed fundamental and double-lobed highest-order array mode emission are achieved with in- and out-of- phase coupling sections, respectively.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128136484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications 温度不敏感的基于inp的量子阱激光器工作在数据通信应用的o波段
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943464
I. Marko, A. Adams, S. Sweeney
{"title":"Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications","authors":"I. Marko, A. Adams, S. Sweeney","doi":"10.23919/ISLC52947.2022.9943464","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943464","url":null,"abstract":"We describe the use of a modified QW structure to achieve temperature stability in O-band lasers. We show the potential for temperature insensitivity of threshold from -40 to $+80{ }^{circ}mathrm{C}$ in an InGaAsP/InP structure. Such devices are of interest for lower energy consuming datacomms systems.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128594057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DFB lasers: From Research to Development, and Further DFB激光器:从研究到发展，以及进一步
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943446
K. Utaka
{"title":"DFB lasers: From Research to Development, and Further","authors":"K. Utaka","doi":"10.23919/ISLC52947.2022.9943446","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943446","url":null,"abstract":"Among various single-mode lasers proposed so far, distributed Bragg reflector (DBR) lasers and distributed feedback (DFB) lasers were spotlighted as the most practical light sources for long-distance and large-capacity optical transmission. Selections of appropriated lasers were made for the applications depending on the intrinsic performances, such as DFB lasers with wavelength stability and DBR lasers with wavelength tunability. As for the applications of undersea cable systems, high reliability was required, and further devised structures were necessary to reach to a λ/4-shifted DFB laser. The unique fabrication method of λ/4-shifted grating was developed to realize quite wavelength-stable single-mode light sources which were actually installed to TPC-4 and other coherent optical systems.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"400 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131720553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fingertip sized external cavity quantum cascade laser based on MEMS grating 基于MEMS光栅的指尖外腔量子级联激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943420
A. Sugiyama, T. Ochiai, Kyosuke Nagasaka, T. Dougakiuchi, T. Edamura, N. Akikusa
{"title":"Fingertip sized external cavity quantum cascade laser based on MEMS grating","authors":"A. Sugiyama, T. Ochiai, Kyosuke Nagasaka, T. Dougakiuchi, T. Edamura, N. Akikusa","doi":"10.23919/ISLC52947.2022.9943420","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943420","url":null,"abstract":"The extremely compact external cavity quantum cascade laser was realized with the MEMS grating. MEMS gratings with various resonant frequencies enabled two types of tunable and swept modes. The characteristics is shown, and we provide spectroscopy demonstration data.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synchronized two-color semiconductor mode-locked laser system for imaging and ranging applications 用于成像和测距应用的同步双色半导体锁模激光系统
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943300
S. Pericherla, L. Trask, C. Shirpurkar, P. Delfyett
{"title":"Synchronized two-color semiconductor mode-locked laser system for imaging and ranging applications","authors":"S. Pericherla, L. Trask, C. Shirpurkar, P. Delfyett","doi":"10.23919/ISLC52947.2022.9943300","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943300","url":null,"abstract":"We demonstrate an electrically synchronized two-color all-semiconductor mode-locked laser system operating at a repetition rate of 282 MHz, generating picosecond pulses centered at 974 nm and 833 nm with peak powers exceeding 100 W and 80 W respectively and a $text{TEM}_{00}$ mode profile at output.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124505304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced Beam Quality of Overlapped Angled Cavity Quantum Cascade Lasers with Integrated Notches 集成刻槽叠加角度腔量子级联激光器的光束质量增强
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943325
M. Suttinger, Chi Yang, R. Kaspi, R. Go, Chunte A. Lu
{"title":"Enhanced Beam Quality of Overlapped Angled Cavity Quantum Cascade Lasers with Integrated Notches","authors":"M. Suttinger, Chi Yang, R. Kaspi, R. Go, Chunte A. Lu","doi":"10.23919/ISLC52947.2022.9943325","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943325","url":null,"abstract":"Angled Cavity Quantum Cascade Lasers have been demonstrated to generate enhanced brightness with power scaling of broad area laser cores while maintaining good beam quality. A further improvement of beam quality is demonstrated in overlapped angled cavity quantum cascade with the introduction of notches.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115404283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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