Progress in efforts to increase power in GaAs-based highpower diode lasers

Abstract

Research into power-scaling in GaAs-based broad-area lasers is summarized, focusing on 940nm single emitters, increasing power by combining triply-asymmetric high-gain epitaxial designs with regrown lateral blocking. In parallel, power is increased by transitioning more laser types to highly asymmetric designs, illustrated with 970nm grating-stabilized bars.