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2022 28th International Semiconductor Laser Conference (ISLC)最新文献

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Advances in Quantum Dot Lasers - 40 Years of History 量子点激光器的发展- 40年的历史
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943404
Y. Arakawa
{"title":"Advances in Quantum Dot Lasers - 40 Years of History","authors":"Y. Arakawa","doi":"10.23919/ISLC52947.2022.9943404","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943404","url":null,"abstract":"A 40-year history of quantum dots that enable high-performance semiconductor lasers is reviewed. The discussion includes the early days of quantum dot laser research, the demonstration of high-temperature operation, applications in silicon photonics, and recent advances in quantum dot light sources.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128002933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Passive waveguide loss measurements in an InGaN-based laser diode structure 基于ingan的激光二极管结构中的无源波导损耗测量
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943392
A. Yamaguchi, Kenta Ogasawara, S. Sakai, T. Okumura, Koichi Naniwae
{"title":"Passive waveguide loss measurements in an InGaN-based laser diode structure","authors":"A. Yamaguchi, Kenta Ogasawara, S. Sakai, T. Okumura, Koichi Naniwae","doi":"10.23919/ISLC52947.2022.9943392","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943392","url":null,"abstract":"Waveguide loss spectrum in an InGaN laser diode (LD) has been measured and the results were compared with an InGaP LD. It is observed that the spectrum has a long tail in the InGaN LD while it shows a sharp rise in the InGaP LD.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133416960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm 在(001)Si上生长的InP/GaAsP DWELL激光器，发射波长为740 nm
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943341
W. Luo, Qi Lin, Jie Huang, K. Wong, Liying Lin, K. Lau
{"title":"InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm","authors":"W. Luo, Qi Lin, Jie Huang, K. Wong, Liying Lin, K. Lau","doi":"10.23919/ISLC52947.2022.9943341","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943341","url":null,"abstract":"We report electrically pumped InP/GaAsP dot-in-well (DWELL) lasers grown on (001) Si. The lowest threshold current density of the DWELL laser on Si is 1.67 kA/cm2, measured on a $k$ device. The maximum operating temperature is 40 °C.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134506416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semi-cooled 128-Gbit/s NRZ operation of directly modulated membrane lasers on SiC substrate SiC衬底上直接调制膜激光器的半冷128 gbit /s NRZ操作
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943439
S. Yamaoka, N. Diamantopoulos, H. Nishi, T. Fujii, K. Takeda, T. Hiraki, S. Kanazawa, T. Kakitsuka, S. Matsuo
{"title":"Semi-cooled 128-Gbit/s NRZ operation of directly modulated membrane lasers on SiC substrate","authors":"S. Yamaoka, N. Diamantopoulos, H. Nishi, T. Fujii, K. Takeda, T. Hiraki, S. Kanazawa, T. Kakitsuka, S. Matsuo","doi":"10.23919/ISLC52947.2022.9943439","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943439","url":null,"abstract":"We report membrane lasers on high-thermal-conductivity SiC exhibiting flat small-signal responses with 3-dB bandwidths of 98 and 84 GHz at 25 and $55^{circ}mathrm{C}$, respectively, due to the high relaxation oscillation frequency and photon-photon resonance frequency. The laser is capable of semi-cooled 128-Gbit/s NRZ transmission.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133892402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer 调制Mg掺杂p-间层和偏振掺杂透明p-接触层的232nm AlGaN Far-DVC LED的EQE为0.57%，功率为4.2 mW
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943343
N. Maeda, Yukio Kashima, Eriko Matsuura, Y. Iwaisako, H. Hirayama
{"title":"0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer","authors":"N. Maeda, Yukio Kashima, Eriko Matsuura, Y. Iwaisako, H. Hirayama","doi":"10.23919/ISLC52947.2022.9943343","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943343","url":null,"abstract":"In order to improve injection efficiency, we introduced the modulation Mg doped p-interlayer and the slightly graded polarization doped p-AlGaN layer into AlGaN far-UV LEDs. As results of, we obtained 0.57% EQE and 4.2mW power operation of 232 nm LED with polarization-doped transparent p-contact layer.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115397790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of Self-scanning Addressable VCSEL array for Time of Flight 飞行时间自扫描可寻址VCSEL阵列的特性
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943494
T. Kondo, J. Hayakawa, M. Murata, D. Iguchi, T. Sakita, T. Higuchi, K. Takeyama, S. Ohno, H. Usami
{"title":"Characteristics of Self-scanning Addressable VCSEL array for Time of Flight","authors":"T. Kondo, J. Hayakawa, M. Murata, D. Iguchi, T. Sakita, T. Higuchi, K. Takeyama, S. Ohno, H. Usami","doi":"10.23919/ISLC52947.2022.9943494","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943494","url":null,"abstract":"We demonstrated all monolithically integrated self-scanning addressable VCSEL arrays for time-of-flight. Advantages of addressable VCSELs for the ToF system are large reductions of power consumption, heat, multi-pass noise, flare noise. Detection of longer distance or lower reflectance object than that using conventional VCSEL are possible.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"370 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123434332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si lens-coupled, room-temperature quantum cascade laser sources operating in 0.4-3 THz range 工作在0.4-3太赫兹范围内的硅透镜耦合室温量子级联激光源
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943353
Shohei Hayashi, A. Ito, T. Dougakiuchi, M. Hitaka, Atushi Nakanishi, K. Fujita
{"title":"Si lens-coupled, room-temperature quantum cascade laser sources operating in 0.4-3 THz range","authors":"Shohei Hayashi, A. Ito, T. Dougakiuchi, M. Hitaka, Atushi Nakanishi, K. Fujita","doi":"10.23919/ISLC52947.2022.9943353","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943353","url":null,"abstract":"Terahertz quantum cascade laser sources based on intra-cavity nonlinear frequency mixing are currently the only electrically pumped monolithic semiconductor light source operating in THz frequency range at room temperature. We demonstrated the power enhancement of the devices in 0.4-3 THz range by using a lens-coupled Cherenkov radiation scheme. Adopting this scheme, the device produces ∼1 milli-watt peak power at a frequency of 2.38 THz at room temperature, which was increased by a factor of approximately four compared to that of a conventional Cherenkov extraction scheme.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124735386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polarization-Stable VCSEL-Arrays Polarization-Stable VCSEL-Arrays
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943362
Sven Bader, M. Herper, A. Weigl, A. van der Lee, U. Weichmann, H. Moench, A. Pruijmboom, Roman Koerner
{"title":"Polarization-Stable VCSEL-Arrays","authors":"Sven Bader, M. Herper, A. Weigl, A. van der Lee, U. Weichmann, H. Moench, A. Pruijmboom, Roman Koerner","doi":"10.23919/ISLC52947.2022.9943362","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943362","url":null,"abstract":"We present our 940nm VCSEL-arrays with linearly polarization emission. To achieve high output powers, arrays with multiple emitters and transversal multi-mode chips are analyzed. All VCSEL-arrays feature the novel surface grating technology based on SCIL-nanoimprint, capable for precise and high-volume fabrication.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121761807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers 在cmos兼容的300毫米硅晶圆上生长的电泵量子点激光器
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943310
Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, M. Debnath, G. Leake, D. Harame, P. Ludewig, J. Bowers
{"title":"Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers","authors":"Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, M. Debnath, G. Leake, D. Harame, P. Ludewig, J. Bowers","doi":"10.23919/ISLC52947.2022.9943310","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943310","url":null,"abstract":"We demonstrate the first electrically pumped quantum-dot (QD) lasers grown on recessed 300 mm Si wafers, with maximum CW lasing output power of 125 mW at 20 °C. This significant advance in heteroepitaxial integration of III-V gain elements onto existing CMOS-compatible Si photonic circuits is promising for photonic integrated circuit integration.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114958122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High order vortex beams generated directly from photonic-crystal surface-emitting laser with honeycomb lattice 蜂窝晶格光子晶体表面发射激光器直接产生高阶涡旋光束
2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI: 10.23919/ISLC52947.2022.9943358
Chia-Jui Chang, Lih-Ren Chen, Bing-Hong Chuang, W. Weng, Yao-Wei Huang, T. Lu
{"title":"High order vortex beams generated directly from photonic-crystal surface-emitting laser with honeycomb lattice","authors":"Chia-Jui Chang, Lih-Ren Chen, Bing-Hong Chuang, W. Weng, Yao-Wei Huang, T. Lu","doi":"10.23919/ISLC52947.2022.9943358","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943358","url":null,"abstract":"We demonstrate that high order vortex beams are generated directly from honeycomb-lattice photonic crystal surface-emitting laser. The measured divergence angle is about 1 degree, and the far field pattern was proved to be superposition of RCP and LCP with topological charge ±2, respectively.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125557066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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