Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, M. Debnath, G. Leake, D. Harame, P. Ludewig, J. Bowers
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Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers
We demonstrate the first electrically pumped quantum-dot (QD) lasers grown on recessed 300 mm Si wafers, with maximum CW lasing output power of 125 mW at 20 °C. This significant advance in heteroepitaxial integration of III-V gain elements onto existing CMOS-compatible Si photonic circuits is promising for photonic integrated circuit integration.
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