基于ingan的激光二极管结构中的无源波导损耗测量

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943392

A. Yamaguchi, Kenta Ogasawara, S. Sakai, T. Okumura, Koichi Naniwae

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引用次数: 0

摘要

测量了InGaN激光二极管的波导损耗谱，并与InGaP激光二极管进行了比较，发现InGaN激光二极管的波导损耗谱呈长尾状，而InGaP激光二极管的波导损耗谱呈急剧上升状。

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Passive waveguide loss measurements in an InGaN-based laser diode structure

Waveguide loss spectrum in an InGaN laser diode (LD) has been measured and the results were compared with an InGaP LD. It is observed that the spectrum has a long tail in the InGaN LD while it shows a sharp rise in the InGaP LD.

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2022 28th International Semiconductor Laser Conference (ISLC)

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