Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers

Abstract

We demonstrate the first electrically pumped quantum-dot (QD) lasers grown on recessed 300 mm Si wafers, with maximum CW lasing output power of 125 mW at 20 °C. This significant advance in heteroepitaxial integration of III-V gain elements onto existing CMOS-compatible Si photonic circuits is promising for photonic integrated circuit integration.