0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

Abstract

In order to improve injection efficiency, we introduced the modulation Mg doped p-interlayer and the slightly graded polarization doped p-AlGaN layer into AlGaN far-UV LEDs. As results of, we obtained 0.57% EQE and 4.2mW power operation of 232 nm LED with polarization-doped transparent p-contact layer.