调制Mg掺杂p-间层和偏振掺杂透明p-接触层的232nm AlGaN Far-DVC LED的EQE为0.57%，功率为4.2 mW

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943343

N. Maeda, Yukio Kashima, Eriko Matsuura, Y. Iwaisako, H. Hirayama

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摘要

为了提高注入效率，我们将调制Mg掺杂p-中间层和微梯度极化掺杂p-AlGaN层引入到AlGaN远紫外led中。结果表明，掺杂偏振透明p接触层的232 nm LED的EQE为0.57%，工作功率为4.2mW。

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0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

In order to improve injection efficiency, we introduced the modulation Mg doped p-interlayer and the slightly graded polarization doped p-AlGaN layer into AlGaN far-UV LEDs. As results of, we obtained 0.57% EQE and 4.2mW power operation of 232 nm LED with polarization-doped transparent p-contact layer.

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2022 28th International Semiconductor Laser Conference (ISLC)

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