在(001)Si上生长的InP/GaAsP DWELL激光器，发射波长为740 nm

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943341

W. Luo, Qi Lin, Jie Huang, K. Wong, Liying Lin, K. Lau

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引用次数: 0

摘要

我们报道了在(001)Si上生长的电泵浦InP/GaAsP井中点(DWELL)激光器。在器件上测量到的最低阈值电流密度为1.67 kA/cm2。最高工作温度为40℃。

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InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm

We report electrically pumped InP/GaAsP dot-in-well (DWELL) lasers grown on (001) Si. The lowest threshold current density of the DWELL laser on Si is 1.67 kA/cm2, measured on a $k$ device. The maximum operating temperature is 40 °C.

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2022 28th International Semiconductor Laser Conference (ISLC)

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