基于inp的$1.3\ \mu\ mathm {m}$量子点激光器

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943326

Vinayakrishna Joshi, S. Bauer, V. Sichkovskyi, F. Schnabel, J. Reithmaier

{"title":"基于inp的$1.3\\ \\mu\\ mathm {m}$量子点激光器","authors":"Vinayakrishna Joshi, S. Bauer, V. Sichkovskyi, F. Schnabel, J. Reithmaier","doi":"10.23919/ISLC52947.2022.9943326","DOIUrl":null,"url":null,"abstract":"An InP based QD laser with InAs quantum dots (QDs) emitting at <tex>$1.3\\ \\mu\\mathrm{m}$</tex> wavelength was realized. A high modal gain of 15 cm−1 per QD layer, low internal absorption value of 11 cm−1 and high internal quantum efficiency of 82% were obtained.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InP-based $1.3\\\\ \\\\mu\\\\mathrm{m}$ quantum dot laser\",\"authors\":\"Vinayakrishna Joshi, S. Bauer, V. Sichkovskyi, F. Schnabel, J. Reithmaier\",\"doi\":\"10.23919/ISLC52947.2022.9943326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An InP based QD laser with InAs quantum dots (QDs) emitting at <tex>$1.3\\\\ \\\\mu\\\\mathrm{m}$</tex> wavelength was realized. A high modal gain of 15 cm−1 per QD layer, low internal absorption value of 11 cm−1 and high internal quantum efficiency of 82% were obtained.\",\"PeriodicalId\":443954,\"journal\":{\"name\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISLC52947.2022.9943326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 28th International Semiconductor Laser Conference (ISLC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISLC52947.2022.9943326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

实现了波长为$1.3\ \mu\ mathm {m}$的InAs量子点(QDs)基于InP的QD激光器。获得了每个QD层15 cm−1的高模态增益，11 cm−1的低内部吸收值和82%的高内部量子效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

InP-based $1.3\ \mu\mathrm{m}$ quantum dot laser

An InP based QD laser with InAs quantum dots (QDs) emitting at $1.3\ \mu\mathrm{m}$ wavelength was realized. A high modal gain of 15 cm⁻¹ per QD layer, low internal absorption value of 11 cm⁻¹ and high internal quantum efficiency of 82% were obtained.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 28th International Semiconductor Laser Conference (ISLC)

自引率

0.00%

发文量