{"title":"温度不敏感的基于inp的量子阱激光器工作在数据通信应用的o波段","authors":"I. Marko, A. Adams, S. Sweeney","doi":"10.23919/ISLC52947.2022.9943464","DOIUrl":null,"url":null,"abstract":"We describe the use of a modified QW structure to achieve temperature stability in O-band lasers. We show the potential for temperature insensitivity of threshold from -40 to $+80{\\ }^{\\circ}\\mathrm{C}$ in an InGaAsP/InP structure. Such devices are of interest for lower energy consuming datacomms systems.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications\",\"authors\":\"I. Marko, A. Adams, S. Sweeney\",\"doi\":\"10.23919/ISLC52947.2022.9943464\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe the use of a modified QW structure to achieve temperature stability in O-band lasers. We show the potential for temperature insensitivity of threshold from -40 to $+80{\\\\ }^{\\\\circ}\\\\mathrm{C}$ in an InGaAsP/InP structure. Such devices are of interest for lower energy consuming datacomms systems.\",\"PeriodicalId\":443954,\"journal\":{\"name\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISLC52947.2022.9943464\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 28th International Semiconductor Laser Conference (ISLC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISLC52947.2022.9943464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications
We describe the use of a modified QW structure to achieve temperature stability in O-band lasers. We show the potential for temperature insensitivity of threshold from -40 to $+80{\ }^{\circ}\mathrm{C}$ in an InGaAsP/InP structure. Such devices are of interest for lower energy consuming datacomms systems.