提高gaas基高功率二极管激光器功率的进展

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943301

P. Crum, M. Elattar, M. J. Miah, J. Fricke, O. Brox, D. Martin, P. Della Casa, A. Maaßdorf, H. Wenzel, A. Knigge, G. Tränkle

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引用次数: 1

摘要

总结了gaas基广域激光器功率缩放的研究，重点是940nm单发射器，通过结合三不对称高增益外延设计和再生横向阻挡来提高功率。同时，通过将更多激光类型过渡到高度不对称设计，功率增加，例如970nm光栅稳定棒。

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Progress in efforts to increase power in GaAs-based highpower diode lasers

Research into power-scaling in GaAs-based broad-area lasers is summarized, focusing on 940nm single emitters, increasing power by combining triply-asymmetric high-gain epitaxial designs with regrown lateral blocking. In parallel, power is increased by transitioning more laser types to highly asymmetric designs, illustrated with 970nm grating-stabilized bars.

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2022 28th International Semiconductor Laser Conference (ISLC)

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