具有新型增强自对准横向结构的高亮度广域二极管激光器

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943315

M. Elattar, O. Brox, P. Della Casa, A. Mogilatenko, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, P. Crump

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引用次数: 0

摘要

我们提出了具有增强自对准横向结构(eSAS)的广域激光器，该激光器使用针对隧道电流抑制优化的电流阻断层，通过原位蚀刻和外延再生集成在p-AlGaAs包层中。横向泄漏减少了10倍，阈值降低30%，峰值效率更高，梁参数得到改善。

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High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure

We present broad-area lasers with enhanced self-aligned lateral structure (eSAS) using current-blocking layers optimized for tunnel current suppression, integrated within the p-AlGaAs cladding using in-situ etching and epitaxial regrowth. Lateral leakage is tenfold reduced, for 30% lower threshold, higher peak efficiency, and improved beam parameters.

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2022 28th International Semiconductor Laser Conference (ISLC)

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