Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications

Abstract

We describe the use of a modified QW structure to achieve temperature stability in O-band lasers. We show the potential for temperature insensitivity of threshold from -40 to $+80{\ }^{\circ}\mathrm{C}$ in an InGaAsP/InP structure. Such devices are of interest for lower energy consuming datacomms systems.