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Active and Passive Electronic Components最新文献

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High Voltage Ride through Control of PMSG-Based Wind Turbine Generation System Using Supercapacitor 基于pmsg的风力发电系统的超级电容器高压穿越控制
IF 0.4
Active and Passive Electronic Components Pub Date : 2019-05-02 DOI: 10.1155/2019/3489252
Guangchen Liu, Jianwen Hu, G. Tian, Lie Xu, Shengtie Wang
{"title":"High Voltage Ride through Control of PMSG-Based Wind Turbine Generation System Using Supercapacitor","authors":"Guangchen Liu, Jianwen Hu, G. Tian, Lie Xu, Shengtie Wang","doi":"10.1155/2019/3489252","DOIUrl":"https://doi.org/10.1155/2019/3489252","url":null,"abstract":"Regarding PMSG-based wind turbine generation system, this paper proposes a supercapacitor energy storage unit (SCESU) which is connected in parallel with the DC-link of the back-to-back converter to enhance its high voltage ride through performance. The analysis of the operation and control for the grid-side converter and SCESU are conducted. Based on real time digital simulators (RTDS), a model and a Hardware-in-the-Loop (HiL) platform of PMSG-based wind turbine with SCESU is developed, and the simulation results show that the SCESU absorbs the imbalanced energy and the grid-side converter absorbs inductive reactive power during the period of voltage swell and verify the correctness and feasibility of the high voltage ride through control strategy.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2019-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/3489252","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48003047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Preparation and Characterization of Printed LTCC Substrates for Microwave Devices 微波器件用印刷LTCC基板的制备与表征
IF 0.4
Active and Passive Electronic Components Pub Date : 2019-04-01 DOI: 10.1155/2019/6473587
Yanfeng Shi, Yongqiang Chai, Shengbo Hu
{"title":"Preparation and Characterization of Printed LTCC Substrates for Microwave Devices","authors":"Yanfeng Shi, Yongqiang Chai, Shengbo Hu","doi":"10.1155/2019/6473587","DOIUrl":"https://doi.org/10.1155/2019/6473587","url":null,"abstract":"A novel LTCC substrate manufacturing process based on 3D printing was investigated in this paper. Borosilicate glass-alumina substrates with controlled size and thickness were successfully manufactured using a self-developed dual-nozzle hybrid printing system. The printing parameters were carefully analyzed. The mechanical and dielectric properties of the printed substrate were examined. The results show that the printed substrates obtain smooth surface (Ra=0.92 μm), compact microstructure (relative density 93.7%), proper bending strength (156 mPa), and low dielectric constant and loss (Ɛr=6.2, 1/tan⁡δ=0.0055, at 3 GHz). All of those qualify the printed glass–ceramic substrates to be used as potential LTCC substrates in the microwave applications. The proposed method could simplify the traditional LTCC technology.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/6473587","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42437663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics 用于连接I-V特性的线性和饱和区域的无平滑函数的基于准二维物理的HEMT模型
IF 0.4
Active and Passive Electronic Components Pub Date : 2019-04-01 DOI: 10.1155/2019/5135637
E. Ryndin, A. Al-Saman, B. Konoplev
{"title":"A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics","authors":"E. Ryndin, A. Al-Saman, B. Konoplev","doi":"10.1155/2019/5135637","DOIUrl":"https://doi.org/10.1155/2019/5135637","url":null,"abstract":"A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/5135637","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42551154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
New Concept of Differential Effective Mobility in MOS Transistors MOS晶体管中差分有效迁移率的新概念
IF 0.4
Active and Passive Electronic Components Pub Date : 2019-03-05 DOI: 10.1155/2019/5716230
K. Bennamane, G. Ghibaudo
{"title":"New Concept of Differential Effective Mobility in MOS Transistors","authors":"K. Bennamane, G. Ghibaudo","doi":"10.1155/2019/5716230","DOIUrl":"https://doi.org/10.1155/2019/5716230","url":null,"abstract":"A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2019-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/5716230","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47577348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Full-Phase Operation Transresistance-Mode Precision Full-Wave Rectifier Designs Using Single Operational Transresistance Amplifier 基于单运维跨阻放大器的全相运维跨阻模式精密全波整流器设计
IF 0.4
Active and Passive Electronic Components Pub Date : 2019-03-03 DOI: 10.1155/2019/1584724
Hung-Chun Chien
{"title":"Full-Phase Operation Transresistance-Mode Precision Full-Wave Rectifier Designs Using Single Operational Transresistance Amplifier","authors":"Hung-Chun Chien","doi":"10.1155/2019/1584724","DOIUrl":"https://doi.org/10.1155/2019/1584724","url":null,"abstract":"This study proposed the designs of two full-phase operation transresistance-mode (TRM) precision full-wave rectifiers. The first circuit consisted of a single operational transresistance amplifier (OTRA), four diodes, and a resistor. The second scheme was an OTRA combined with a full metal-oxide semiconductor field-effect transistor-based design, which is preferable for integrated circuit implementation because no passive components are used in the circuit topology. Based on our literature review, this is the first study that discussed a full-phase operation transresistance-mode precision full-wave rectifier consisting of a single OTRA and few passive components. In this paper, several previously reported precision full-wave rectifiers consisting of various active devices are first reviewed followed by the proposed OTRA-based transresistance-mode precision full-wave rectifiers and an analysis of nonideal effects. Furthermore, computer simulations and experimental results are presented to verify the validity of the proposed circuits, which were consistent with the theoretical predictions.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2019-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/1584724","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45736776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Multitransmission Zero Dual-Band Bandpass Filter Using Nonresonating Node for 5G Millimetre-Wave Application 5G毫米波应用中基于非谐振节点的多传输零双带通滤波器
IF 0.4
Active and Passive Electronic Components Pub Date : 2018-12-13 DOI: 10.1155/2018/7628598
Liyun Shi, Jianjun Gao
{"title":"Multitransmission Zero Dual-Band Bandpass Filter Using Nonresonating Node for 5G Millimetre-Wave Application","authors":"Liyun Shi, Jianjun Gao","doi":"10.1155/2018/7628598","DOIUrl":"https://doi.org/10.1155/2018/7628598","url":null,"abstract":"A planer millimetre-wave dual-band bandpass filter with multitransmission zeros is proposed for 5G application. This filter includes two dual-mode open-loop resonators. The U-shape nonresonating node is employed to generate an extra coupling path. Finally, a dual-band bandpass filter with five transmission zeros is obtained. The filter is fabricated and measured. Good agreement between simulation and measurement is obtained.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2018-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/7628598","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44111980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis of Noise Characteristics of Multichannel Systems of the Formation of Signals of Georadars with Synthesized Aperture 合成孔径地质雷达信号形成多通道系统噪声特性分析
IF 0.4
Active and Passive Electronic Components Pub Date : 2018-12-04 DOI: 10.1155/2018/9429863
O. Kuzichkin, D. I. Surzhik, G. S. Vasiliev, I. Kurilov, N. V. Dorofeev
{"title":"Analysis of Noise Characteristics of Multichannel Systems of the Formation of Signals of Georadars with Synthesized Aperture","authors":"O. Kuzichkin, D. I. Surzhik, G. S. Vasiliev, I. Kurilov, N. V. Dorofeev","doi":"10.1155/2018/9429863","DOIUrl":"https://doi.org/10.1155/2018/9429863","url":null,"abstract":"The noise characteristics of multichannel systems of forming signals based on hybrid frequency synthesizers with automatic compensation of phase distortions of direct digital synthesizers, which are used in the composition of georadars with synthesized aperture, are investigated. It is established that the phase noise of the output signals of the formers at the 1 kHz detuning from the carrier oscillation at the output frequencies of the devices in the range from 500 to 3500 MHz is characterized by a level of minus 100 - minus 130 dB. In this case, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a reference oscillator of a phase locked loop is characterized by the worst noise characteristics but with the highest degree of autocompensation (about 13 dB). Conversely, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a support generator of the phase-locked loop has the best phase noises level from the considered variants of devices and least degree of autocompensation (about 6 dB).","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2018-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/9429863","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45503003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the Memristances, Parameters, and Analysis of the Fractional Order Memristor 分数阶忆阻器的记忆特性、参数及分析
IF 0.4
Active and Passive Electronic Components Pub Date : 2018-11-01 DOI: 10.1155/2018/3408480
R. Banchuin
{"title":"On the Memristances, Parameters, and Analysis of the Fractional Order Memristor","authors":"R. Banchuin","doi":"10.1155/2018/3408480","DOIUrl":"https://doi.org/10.1155/2018/3408480","url":null,"abstract":"In this work, the analytical expressions of memristances, related parameters, and time domain behavioral analysis of the fractional order memristor have been proposed. Both DC with arbitrary delay and many AC waveforms including arbitrary phase sinusoidal and cosinusoidal waveform along with arbitrary periodic waveform have been taken into account. Unlike the previous works, the formerly ignored dimensional consistency has been taken into account and the analytical modelling of the boundary effect has been performed. Moreover, both transient and asymptotic behaviors of the fractional order memristor excited by AC waveform have been distinguished and analyzed. The effect of phase of AC waveform has also been studied. The influence of the fractional order to the areas of voltage-current hysteresis loop and memristance-current lissajous curve has also been clearly discussed and the usage of fractional order memristor in the memristor based circuit has also been demonstrated.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/3408480","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45421301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Design and Implementation of a Modular Bidirectional Switch Using SiC-MOSFET for Power Converter Applications 功率变换器用SiC-MOSFET模块化双向开关的设计与实现
IF 0.4
Active and Passive Electronic Components Pub Date : 2018-10-08 DOI: 10.1155/2018/4198594
E. Maqueda, J. Rodas, S. Toledo, R. Gregor, D. Caballero, F. Gavilán, M. Rivera
{"title":"Design and Implementation of a Modular Bidirectional Switch Using SiC-MOSFET for Power Converter Applications","authors":"E. Maqueda, J. Rodas, S. Toledo, R. Gregor, D. Caballero, F. Gavilán, M. Rivera","doi":"10.1155/2018/4198594","DOIUrl":"https://doi.org/10.1155/2018/4198594","url":null,"abstract":"The bidirectional switch (Bi-Sw) is a power device widely used by power conversion systems. This paper presents a novel modular design of a Bi-Sw with the purpose of providing to beginner researchers the key issues to design a power converter. The Bi-Sw has been designed in modular form using the SiC-MOSFET device. The Bi-Sw uses the advantages of SiC-MOSFET to operate at high switching frequencies. The verification of the module is carried out experimentally by means of the implementation in a voltage regulating converter, where performance analysis, power losses, and temperature dissipation are performed.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2018-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/4198594","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44079029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Architecture Characteristics and Technical Trends of UHF RFID Temperature Sensor Chip 超高频RFID温度传感器芯片的结构特点及技术趋势
IF 0.4
Active and Passive Electronic Components Pub Date : 2018-10-01 DOI: 10.1155/2018/9343241
Guofeng Zhang, Dehua Wu, Jingdun Jia, W. Gao, Qiang Cai, Wan’ang Xiao, Lina Yu, Sha Tao, Qi Chu
{"title":"Architecture Characteristics and Technical Trends of UHF RFID Temperature Sensor Chip","authors":"Guofeng Zhang, Dehua Wu, Jingdun Jia, W. Gao, Qiang Cai, Wan’ang Xiao, Lina Yu, Sha Tao, Qi Chu","doi":"10.1155/2018/9343241","DOIUrl":"https://doi.org/10.1155/2018/9343241","url":null,"abstract":"The integration of temperature sensor (TS) and UHF RFID technology has attracted wide attention theoretically and experimentally. The architecture, power consumption, temperature measurement range, accuracy, and communication distance are key indicators of the performance of UHF RFID temperature sensor chip (RID-TSC). This work aims to provide a clearer view of the development of UHF RFID-TSC integration technology. After a systematic analysis of the characteristics of ADC, TDC, and FDC used in an integrated TS, the key low-power technologies under different architectures are summarized. Through the observation of the latest researches and commercial products, the development trend of UHF RFID-TSC technology is obtained, including on-chip and off-chip coordination, multiprotocol and multifrequency support, passive wireless sensor intelligence, miniaturization, and concealment.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/9343241","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44961911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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