用于连接I-V特性的线性和饱和区域的无平滑函数的基于准二维物理的HEMT模型

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2019-04-01 DOI:10.1155/2019/5135637

E. Ryndin, A. Al-Saman, B. Konoplev

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引用次数: 3

摘要

开发了一种基于准二维物理的HEMT晶体管模型，该模型不使用任何平滑函数来连接电流-电压（I-V）特性的线性和饱和区域。考虑到电子的谷间跃迁和晶体管沟道中空穴的存在，我们计算了沟道内电场、电子温度和电子迁移率的不均匀空间分布。该模型与线性和饱和操作区域的实验数据非常一致。该模型提供了HEMT晶体管的精确模拟，并可作为分析和预测材料参数对器件和电路特性影响的工具。

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A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics

A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.