Active and Passive Electronic Components最新文献

Analysis and Design of High-Energy-Efficiency Amplifiers for Delta-Sigma Modulators 用于三角积分调制器的高能效放大器的分析与设计

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Active and Passive Electronic Components Pub Date : 2023-11-23 DOI: 10.1155/2023/2265990

Jinze Lai, Yuxuan Lin, Gumeng Zhao, Lijie Huang, Cong Wei, Rongshan Wei, Wei Hu

引用次数: 0

An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure 一种改进型小信号模型参数提取方法，适用于频率高达 110 GHz 且具有短测试结构的 GaN HEMT

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Active and Passive Electronic Components Pub Date : 2023-11-21 DOI: 10.1155/2023/5589831

Qingyu Yuan, Jinze Tang, Xiaodong Luan, Xin Lin, Fan Chang, Jiali Cheng

引用次数: 0

A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications 一种用于高速应用的低阈值电压超动态电压缩放SRAM写辅助技术

Active and Passive Electronic Components Pub Date : 2023-11-07 DOI: 10.1155/2023/1697836

Uma Maheshwar Janniekode, Rajendra Prasad Somineni

引用次数: 0

Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell 内置自读写辅助10T SRAM单元性能及稳定性分析

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Active and Passive Electronic Components Pub Date : 2023-06-30 DOI: 10.1155/2023/3371599

Chokkakula Ganesh, Fazal Noorbasha

{"title":"Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell","authors":"Chokkakula Ganesh, Fazal Noorbasha","doi":"10.1155/2023/3371599","DOIUrl":"https://doi.org/10.1155/2023/3371599","url":null,"abstract":"This work presents the performance and stability analysis of the proposed built-in self-read and write assist 10T SRAM (BSRWA 10T) for better performance in terms of thermal stability and fast write access, which is suitable for military and aerospace applications. The performance of the proposed SRAM cell dominates the previous SRAM cells, i.e., conventional, fully differential 10T-ST (FD 10T-ST), single stacked disturbance-free 9T-ST (SSDF 9T-ST). The proposed SRAM cell dominates the SSDF 9T-ST SRAM cell in terms of write ability. The built-in self-read and write assist structure of the memory cell also dominates the improved write ability of SSDF 9T-ST SRAM by assist circuits such as negative bit line, ultra-dynamic voltage scaling (UDVS), write assist combining negative BL, and VDD collapse. The impact of assist circuits on write performance of memory cells is observed using Monte Carlo simulation for write margin (WM) parameter. WM of SSDF 9T-ST SRAM is improved by 15% and 25% by adding UDVS assist circuit and write assist combining negative BL and VDD collapse circuit. But BSRWA SRAM cell itself can improve WM by 32% without any assist circuit. The impact of temperature variation on the performance of memory cells is observed using Monte Carlo simulation for the HSNM parameter. The deviation of HSNM for 15°C to 55°C is 14%, 5%, 4%, and 1% in conventional SRAM cell, FD 10T SRAM cell, SSDF 9T SRAM cell, and proposed BSRWA 10T SRAM cell, respectively. The proposed SRAM cell is designed at a 22 nm CMOS technology node and verified in the Synopsys Custom compiler. MC simulation results are monitored on Synopsys Cosmo-scope wave viewer.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48168428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node 基于28nm技术节点的高密度、8T2R nvSRAM存储单元

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Active and Passive Electronic Components Pub Date : 2023-02-14 DOI: 10.1155/2023/2364341

Jiayu Yin, W.-J. Liao, Chengying Chen

引用次数: 0

Successive Approximation Register Analog-to-Digital Converter (SAR ADC) for Biomedical Applications 生物医学应用的逐次逼近寄存器模数转换器(SAR ADC)

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Active and Passive Electronic Components Pub Date : 2023-01-04 DOI: 10.1155/2023/3669255

Kawther I. Arafa, Dina M. Ellaithy, A. Zekry, M. Abouelatta, H. Shawkey

{"title":"Successive Approximation Register Analog-to-Digital Converter (SAR ADC) for Biomedical Applications","authors":"Kawther I. Arafa, Dina M. Ellaithy, A. Zekry, M. Abouelatta, H. Shawkey","doi":"10.1155/2023/3669255","DOIUrl":"https://doi.org/10.1155/2023/3669255","url":null,"abstract":"This study presents a survey of the most promising reported SAR ADC designs for biomedical applications, stressing advantages, disadvantages, and limitations, and concludes with a quantitative comparison. Recent progress in the development of a single SAR ADC architecture is reviewed. In wearable and biosensor systems, a very small amount of total power must be devoured by portable batteries or energy-harvesting circuits in order to function correctly. During the past decade, implementation of the high energy efficiency of SAR ADC has become the most necessary. So, several different implementation schemes for the main components of the SAR ADC have been proposed. In this review study, the various circuit architectures have been explained, beginning with the sample and hold (S/H) switching circuits, the dynamic comparator, the internal digital-to-analog converter (DAC), and the SAR control logic. In order to achieve low power consumption, numerous different configurations of dynamic comparator circuits are revealed. At the end of this overview, the evolutions of DAC architecture in distinct biomedical applications today can make a tradeoff between resolution, speed, and linearity, which represent the challenges of a single SAR ADC. For high resolution, the dual split capacitive DAC (CDAC) array technique and hybrid capacitor technique can be used. Also, for ultralow power consumption, various voltage switching schemes are achieved to reduce the number of switches. These schemes can save switching energy and reduce capacitor array area with high linearity. Additionally, to increase the speed of the conversion process, a prediction-based ADC design is employed. Therefore, SAR ADC is considered the ideal solution for biomedical applications.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"226 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64794172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A Double-Boost Converter Based on Coupled Inductance and Magnetic Integration 基于电感耦合和磁集成的双升压变换器

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Active and Passive Electronic Components Pub Date : 2021-12-31 DOI: 10.1155/2021/8014620

Hongzhu Li, Lingwei Zhu, Le Wang

{"title":"A Double-Boost Converter Based on Coupled Inductance and Magnetic Integration","authors":"Hongzhu Li, Lingwei Zhu, Le Wang","doi":"10.1155/2021/8014620","DOIUrl":"https://doi.org/10.1155/2021/8014620","url":null,"abstract":"High-voltage gain converter has a high-frequency use in some industrial fields, for instance, the fuel cell system, the photovoltaic system, electric vehicles, and the high-intensity discharge lamp. In order to solve the problem of the low-voltage gain of traditional boost converter, the double-boost converter with coupled inductance and doubled voltage is proposed, which connects the traditional boost converter in parallel. The voltage gain of the converter is further improved by introducing the voltage-doubled unit of the coupled inductance. Moreover, the clamp capacitor can absorb the leakage inductance in the circuit and reduce the voltage stress of the switch. In addition, two coupled inductors are magnetically collected; then, the loss of the core is analyzed under the same gain. The detailed analysis of the proposed converter and a comparison considering other topologies previously published in the literature are also presented in this article. In order to verify the proposed converter performance, a prototype has been built for a power of 200 W, input and output voltages of 12 and 84 V, respectively, and a switching frequency of 50 kHz. Experimental results validate the effectiveness of the theoretical analysis proving the satisfactory converter performance, whose peak efficiency is 95.5%.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42146024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior 一种具有t型沟道结构、具有三输入多数逻辑行为的新型三输入TFET

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Active and Passive Electronic Components Pub Date : 2021-11-26 DOI: 10.1155/2021/8919283

Ye Hao, Jiang Zhidi, Jianping Hu

引用次数: 0

A Novel Passive Circuit Emulator for a Current-Controlled Memristor 一种新型电流控制忆阻器无源电路仿真器

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Active and Passive Electronic Components Pub Date : 2021-04-22 DOI: 10.1155/2021/5582774

L. Barboni

{"title":"A Novel Passive Circuit Emulator for a Current-Controlled Memristor","authors":"L. Barboni","doi":"10.1155/2021/5582774","DOIUrl":"https://doi.org/10.1155/2021/5582774","url":null,"abstract":"A memristor is an electrical element, which has been conjectured in 1971 to complete the lumped circuit theory. Currently, researchers use memristor emulators through diodes, inductors, and other passive (or active) elements to study circuits with possible attractors, chaos, and ways of implementing nonlinear transformations for low-voltage novel computing paradigms. However, to date, such passive memristor emulators have been voltage-controlled. In this study, a novel circuit realization of a passive current-controlled passive inductorless emulator is established. It overcomes the lack of passive current-controlled memristor commercial devices, and it can be used as part of more sophisticated circuits. Moreover, it covers a gap in the state of the art because, currently, only passive circuit voltage-controlled memristor emulators and active current-controlled emulators have been developed and used. The emulator only uses two diodes, two resistors, and one capacitance and is passive. The formal theory and simulations validate the proposed circuit, and experimental measurements were performed. The parameter conditions of numerical simulations and experiments are consistent. Simulations were performed with an input current amplitude of and frequencies of up to and measurements were carried out with an input current amplitude of and frequency of in order to compare with the state of the art.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2021 1","pages":"1-8"},"PeriodicalIF":0.4,"publicationDate":"2021-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47552459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

A Comparative Study of Over-Current Sensing for Traction Inverters 牵引逆变器过电流传感的比较研究

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Active and Passive Electronic Components Pub Date : 2021-01-21 DOI: 10.1155/2021/6678234

He Niu

引用次数: 1