A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Uma Maheshwar Janniekode, Rajendra Prasad Somineni
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引用次数: 0

Abstract

With the percentage of embedded SRAM increasing in SoC chips, low-power design such as the near-threshold SRAM technique are getting increasing attention to reduce the entire chip energy consumption. However, the descending operating voltage will lead to longer write latency and a higher failure rate. In this paper, we present a novel low Vth ultradynamic voltage scaling (UDVS) 9T subthreshold SRAM cell to improve the write ability of SRAM cells. The proposed Low Vth UDVS SRAM cell is demonstrated with a low threshold voltage speed-up transistor and an ultradynamic voltage scaling circuit implemented in 16 nm low-leakage CMOS technology. This wide supply range was made possible by a combination of circuits optimized for both subthreshold and abovethreshold regimes. This write assist technique can be operated selectively to provide write capability at very low voltage levels while avoiding excessive power overhead. The simulation findings reveal that with 16 nm technology, the write ability is improved by 33% over the normal case at 0.9 V supply voltage.
一种用于高速应用的低阈值电压超动态电压缩放SRAM写辅助技术
随着SoC芯片中嵌入式SRAM比例的增加,低功耗设计如近阈值SRAM技术越来越受到关注,以降低整个芯片的能耗。但是,工作电压的降低会导致写延迟时间的延长和故障率的提高。本文提出了一种新颖的低v超动态电压缩放(UDVS) 9T亚阈值SRAM单元,以提高SRAM单元的写入能力。所提出的低Vth UDVS SRAM单元采用低阈值电压加速晶体管和采用16 nm低漏CMOS技术实现的超动态电压缩放电路。这种宽供应范围是通过对亚阈值和高于阈值制度优化的电路组合而实现的。这种写入辅助技术可以选择性地操作,以在非常低的电压水平下提供写入能力,同时避免过多的功率开销。仿真结果表明,采用16nm技术,在0.9 V电源电压下,写入能力比正常情况下提高了33%。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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