A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Ye Hao, Jiang Zhidi, Jianping Hu
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引用次数: 0

Abstract

In this paper, we propose a new type of tri-input tunneling field-effect transistor (Ti-TFET) that can compactly realize the “Majority-Not” logic function with a single transistor. It features an ingenious T-shaped channel and three independent-biasing gates deposited and patterned on its left, right, and upper sides, which greatly enhance the electrostatic control ability between any two gates of all the three gates on the device channel and thus increase its turn-on current. The total current density and energy band distribution in different biasing conditions are analyzed in detail by TCAD simulations. The turn-on current, leakage current, and ratio of turn-on/off current are optimized by choosing appropriate work function and body thickness. TCAD simulation results verify the expected characteristics of the proposed Ti-TFETs in different working states. Ti-TFETs can flexibly be used to implement a logic circuit with a compact style and thus reduce the number of transistors and stack height of the circuits. It provides a new technique to reduce the chip area and power consumption by saving the number of transistors.
一种具有t型沟道结构、具有三输入多数逻辑行为的新型三输入TFET
本文提出了一种新型的三输入隧道场效应晶体管(Ti-TFET),它可以用单晶体管紧凑地实现“多数非”逻辑功能。它具有巧妙的t型沟道,并在其左、右、上三个独立的偏置栅极上沉积和图案,大大增强了器件沟道上所有三个栅极中任意两个栅极之间的静电控制能力,从而增加了其导通电流。通过TCAD仿真详细分析了不同偏置条件下的总电流密度和能带分布。通过选择合适的工作功能和机身厚度,优化导通电流、漏电流和通断电流比。TCAD仿真结果验证了所提出的ti - tfet在不同工作状态下的预期特性。利用ti - tfet可以灵活地实现紧凑的逻辑电路,从而减少晶体管的数量和电路的堆叠高度。它提供了一种通过节省晶体管数量来减小芯片面积和功耗的新技术。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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