分数阶忆阻器的记忆特性、参数及分析

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2018-11-01 DOI:10.1155/2018/3408480

R. Banchuin

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引用次数: 9

摘要

在这项工作中，提出了分数阶忆阻器的忆阻率、相关参数的解析表达式和时域行为分析。考虑了具有任意延迟的DC和包括任意相位正弦和余弦波形以及任意周期波形的许多AC波形。与之前的工作不同，考虑到了以前被忽视的尺寸一致性，并对边界效应进行了分析建模。此外，还对交流波形激励的分数阶忆阻器的瞬态和渐近行为进行了区分和分析。还研究了交流波形相位的影响。还清楚地讨论了分数阶对电压-电流滞环面积和忆阻-电流-利萨茹曲线的影响，并证明了分数阶忆阻器在基于忆阻器的电路中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the Memristances, Parameters, and Analysis of the Fractional Order Memristor

In this work, the analytical expressions of memristances, related parameters, and time domain behavioral analysis of the fractional order memristor have been proposed. Both DC with arbitrary delay and many AC waveforms including arbitrary phase sinusoidal and cosinusoidal waveform along with arbitrary periodic waveform have been taken into account. Unlike the previous works, the formerly ignored dimensional consistency has been taken into account and the analytical modelling of the boundary effect has been performed. Moreover, both transient and asymptotic behaviors of the fractional order memristor excited by AC waveform have been distinguished and analyzed. The effect of phase of AC waveform has also been studied. The influence of the fractional order to the areas of voltage-current hysteresis loop and memristance-current lissajous curve has also been clearly discussed and the usage of fractional order memristor in the memristor based circuit has also been demonstrated.

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.