Active and Passive Electronic Components最新文献_第4页

Design and Implementation of a Modular Bidirectional Switch Using SiC-MOSFET for Power Converter Applications 功率变换器用SiC-MOSFET模块化双向开关的设计与实现

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Active and Passive Electronic Components Pub Date : 2018-10-08 DOI: 10.1155/2018/4198594

E. Maqueda, J. Rodas, S. Toledo, R. Gregor, D. Caballero, F. Gavilán, M. Rivera

引用次数: 7

Abnormal Capacitance Increasing at Elevated Temperature in Tantalum Capacitors with PEDOT:PSS Electrodes 采用PEDOT:PSS电极的钽电容器在高温下异常电容增大

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Active and Passive Electronic Components Pub Date : 2018-10-01 DOI: 10.1155/2018/9864387

Q. Pan, Qiao Liu, Yuanjiang Yang, D. Tian

引用次数: 1

Architecture Characteristics and Technical Trends of UHF RFID Temperature Sensor Chip 超高频RFID温度传感器芯片的结构特点及技术趋势

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Active and Passive Electronic Components Pub Date : 2018-10-01 DOI: 10.1155/2018/9343241

Guofeng Zhang, Dehua Wu, Jingdun Jia, W. Gao, Qiang Cai, Wan’ang Xiao, Lina Yu, Sha Tao, Qi Chu

引用次数: 7

An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study 二维4点2电子QCA全加减法器结构及能量耗散研究

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Active and Passive Electronic Components Pub Date : 2018-09-24 DOI: 10.1155/2018/5062960

Md. Abdullah-Al-Shafi, A. Bahar

{"title":"An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study","authors":"Md. Abdullah-Al-Shafi, A. Bahar","doi":"10.1155/2018/5062960","DOIUrl":"https://doi.org/10.1155/2018/5062960","url":null,"abstract":"Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. A competent adder and subtractor circuit can perform a substantial function in devising arithmetic circuits. The future age of digital techniques will exercise QCA as preferred nanotechnology. The QCA computational procedures will be simplified with an effective full adder and subtractor circuit. The deficiencies of variations and assembly still endure as a setback in QCA based outlines, and being capricious and inclined to error is the limitation of these circuits. In this study, a new full adder and subtractor design using unique 3-input XOR gate with cells redundancy is proposed. This designs can be utilized to form different expedient QCA layouts. The structures are formed in a single layer deprived of cross-wiring. Besides, this study is directed to the analysis of the functionality and energy depletion possessions of the outlined full adder and subtractor circuits. For the first time, QCADesigner-Energy (QD-E) version 2.0.3 tool is utilized to find the overall depleted energy. The attained effects with QCADesigner have verified that the outlined design has enhanced functioning in terms of intricacy, extent, and latency in contrast to the earlier designs. Moreover, the redundant form of full adder and subtractor has uncomplicated and robust arrangement competing typical styles.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2018-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/5062960","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44805584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 33

Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells 双阈值独立门FinFET和SRAM单元的综合优化

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Active and Passive Electronic Components Pub Date : 2018-09-19 DOI: 10.1155/2018/4512924

H. Ni, Jianping Hu, Huishan Yang, Haotian Zhu

{"title":"Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells","authors":"H. Ni, Jianping Hu, Huishan Yang, Haotian Zhu","doi":"10.1155/2018/4512924","DOIUrl":"https://doi.org/10.1155/2018/4512924","url":null,"abstract":"Independent-Gate (IG) FinFET is a promising device in circuit applications due to its two separated gates, which can be used independently. In this paper, we proposed a comprehensive method to optimize the Dual Threshold (DT) IG FinFET devices by carrying out modulations for the gate electrode work function, oxide thickness, and silicon body thickness. Titanium nitride (TiNx) is used as the tunable work function gate electrode for good performances. The thicknesses of the gate oxide and silicon body are swept by TCAD simulations to obtain the appropriate values. The verification simulation of the optimized transistors shows that the DT IG FinFETs can realize merging parallel and series transistors, respectively, and the current characteristics of the transistors are improved significantly. By extracting the BSIM-IMG model parameters, we can simulate the circuits composed of the proposed DT IG FinFET by using HSPICE with BSIM-IMG model. As practical examples, we optimized two novel 7T SRAM cells using DT IG FinFETs. HSPICE simulation results indicate that the new SRAM cells obtain higher write margin and read static noise margin with lower leakage power consumption than the other implementations.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/4512924","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64732913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

New Pulse Width Modulation Technique to Reduce Losses for Three-Phase Photovoltaic Inverters 降低三相光伏逆变器损耗的新型脉宽调制技术

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Active and Passive Electronic Components Pub Date : 2018-08-27 DOI: 10.1155/2018/4157614

M. Mnati, D. Bozalakov, A. Van den Bossche

引用次数: 7

DRV Evaluation of 6T SRAM Cell Using Efficient Optimization Techniques 基于高效优化技术的6T SRAM电池DRV评估

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Active and Passive Electronic Components Pub Date : 2018-07-25 DOI: 10.1155/2018/3457284

V. Joshi, Chetan D. Nayak

引用次数: 4

A New Fractal Multiband Antenna for Wireless Power Transmission Applications 一种用于无线电力传输的新型分形多波段天线

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Active and Passive Electronic Components Pub Date : 2018-01-01 DOI: 10.1155/2018/2084747

Taoufik Benyetho, J. Zbitou, L. E. Abdellaoui, H. Bennis, A. Tribak

引用次数: 14

VHDL-AMS Simulation Framework for Molecular-FET Device-to-Circuit Modeling and Design 分子fet器件电路建模与设计的VHDL-AMS仿真框架

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Active and Passive Electronic Components Pub Date : 2018-01-01 DOI: 10.1155/2018/6974874

M. Graziano, A. Zahir, M. A. Mehdy, G. Piccinini

{"title":"VHDL-AMS Simulation Framework for Molecular-FET Device-to-Circuit Modeling and Design","authors":"M. Graziano, A. Zahir, M. A. Mehdy, G. Piccinini","doi":"10.1155/2018/6974874","DOIUrl":"https://doi.org/10.1155/2018/6974874","url":null,"abstract":"We concentrate on Molecular-FET as a device and present a new modular framework based on VHDL-AMS. We have implemented different Molecular-FET models within the framework. The framework allows comparison between the models in terms of the capability to calculate accurate - characteristics. It also provides the option to analyze the impact of Molecular-FET and its implementation in the circuit with the extension of its use in an architecture based on the crossbar configuration. This analysis evidences the effect of choices of technological parameters, the ability of models to capture the impact of physical quantities, and the importance of considering defects at circuit fabrication level. The comparison tackles the computational efforts of different models and techniques and discusses the trade-off between accuracy and performance as a function of the circuit analysis final requirements. We prove this methodology using three different models and test them on a 16-bit tree adder included in Pentium 4 that, to the best of our knowledge, is the biggest circuits based on molecular device ever designed and analyzed.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/6974874","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64735875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A Self-Biased Active Voltage Doubler for Energy Harvesting Systems 一种用于能量采集系统的自偏置有源倍压器

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Active and Passive Electronic Components Pub Date : 2017-12-03 DOI: 10.1155/2017/1650161

U. Tayyab, H. Alzaher

引用次数: 2